公开(公告)号：US09704713B1

公开(公告)日：2017-07-11

申请号：US15091798

申请日：2016-04-06

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C09D1/00 ,  H01L21/225 ,  H01B3/02 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

公开(公告)号：US09336925B1

公开(公告)日：2016-05-10

申请号：US13889149

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C08G77/04 ,  H01B3/02 ,  H01L21/02 ,  C07F7/02 ,  C07F7/08 ,  C08G77/06

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

Abstract translation: 在一个方面，本发明提供基本上不含碳和其它不期望的污染物的未掺杂和掺杂的硅氧烷，锗氧烷和硅胶。 在第二方面，本发明提供了制备这种未掺杂和掺杂的硅氧烷，锗烷和硅胶木糖的方法。 在另一方面，本发明提供了包含未掺杂和/或掺杂的硅氧烷，锗氧烷和硅藻木素和溶剂的组合物，以及用于从这种组合物形成未掺杂和掺杂的介电膜的方法。 所描述的未掺杂和/或掺杂的硅氧烷组合物有利地提供未掺杂和/或掺杂的电介质前体油墨，其可用于形成基本上不含碳的未掺杂和/或掺杂的介电膜。