Distributed amplifier optical modulators
    7.
    发明申请
    Distributed amplifier optical modulators 有权
    分布式放大器光调制器

    公开(公告)号:US20050036791A1

    公开(公告)日:2005-02-17

    申请号:US10917927

    申请日:2004-08-13

    摘要: High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

    摘要翻译: 高速光学调制器可以由串联设置在各种半导体衬底之一上的k个调制器组成。 在微波传输线中传播的电信号以规则的间隔从传输线路中分离出来,并由k个分布式放大器放大。 k个分布式放大器的每个输出连接到k个调制器中的相应一个。 分布式放大器调制器可以具有比可比较的集总元件调制器高得多的调制速度,这是由于每个k个调制器的电容较小。 由于分布式放大器提供的阻抗匹配,分布式放大器调制器可以具有比类似的行波调制器更高的调制速度。

    Doping profiles in PN diode optical modulators
    10.
    发明授权
    Doping profiles in PN diode optical modulators 有权
    PN二极管光调制器中的掺杂谱

    公开(公告)号:US07085443B1

    公开(公告)日:2006-08-01

    申请号:US10916857

    申请日:2004-08-11

    IPC分类号: G02F1/035 G02B6/12

    摘要: High speed optical modulators can be made of a lateral PN diode formed in a silicon optical waveguide, disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Each of the doped regions can have a stepped or gradient doping profile within it or several doped sections with different doping concentrations. Forming the doped regions of a PN diode modulator with stepped or gradient doping profiles can optimize the trade off between the series resistance of the PN diode and the optical loss in the center of the waveguide due to the presence of dopants.

    摘要翻译: 高速光学调制器可以由形成在硅光波导中的横向PN二极管制成,设置在SOI或其它硅基衬底上。 在P和N掺杂区域的边界处形成PN结。 PN结的耗尽区与通过波导传播的引导光模的中心重叠。 横向PN二极管的电学调制引起在波导中传播的光波的相移。 每个掺杂区域可以在其内具有阶梯式或梯度掺杂分布,或者具有不同掺杂浓度的多个掺杂区。 形成具有阶梯式或梯度掺杂分布的PN二极管调制器的掺杂区域可以优化PN二极管的串联电阻与由于掺杂剂的存在引起的波导中心的光损耗之间的折衷。