Method for determining the times when it will be necessary to change, or add to, the engine oil in a motor vehicle engine
    1.
    发明授权
    Method for determining the times when it will be necessary to change, or add to, the engine oil in a motor vehicle engine 失效
    确定需要改变或添加到机动车辆发动机中的发动机油的时间的方法

    公开(公告)号:US06266587B1

    公开(公告)日:2001-07-24

    申请号:US09319538

    申请日:1999-06-08

    IPC分类号: G06F1900

    摘要: The invention relates to a method for determining engine oil servicing dates for a motor vehicle engine as a function of recorded engine operating parameters. According to the invention, the number of engine revolutions and at least one engine other operating parameter relevant to engine oil ageing are continuously recorded and, on the basis of this, a fictitious distance is determined by associating the recorded engine revolutions with the evaluation factors dependent on recorded engine operating parameter(s) relevant to engine oil ageing in accordance with a predeterminable association relationship. From this, a remaining operating distance until the next engine oil servicing date is then calculated by subtracting the determined fictitious distance from a specified total distance potential.

    摘要翻译: 本发明涉及一种用于根据记录的发动机操作参数确定机动车辆发动机的发动机机油服务日期的方法。 根据本发明,连续地记录发动机转数和与发动机机油老化有关的至少一个发动机其它操作参数,并且基于此,通过将记录的发动机转数与评估因子相关联来确定虚拟距离 根据可预先确定的关联关系,记录与发动机机油老化有关的发动机工作参数。 由此,通过从指定的总距离电位中减去所确定的虚拟距离来计算直到下一个发动机机油服务日期的剩余操作距离。

    Semiconductor Arrangement
    2.
    发明申请
    Semiconductor Arrangement 有权
    半导体安排

    公开(公告)号:US20130240902A1

    公开(公告)日:2013-09-19

    申请号:US13419469

    申请日:2012-03-14

    摘要: A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.

    摘要翻译: 第一导电类型的第一半导体区域由掺杂有第一和第二掺杂剂的半导体基底材料形成。 第一和第二掺杂剂是不同的物质,也不同于半导体基材。 第一掺杂剂是电活性的并且引起半导体基底材料中的第一导电类型的掺杂,并且导致纯的未掺杂的第一半导体区域的晶格常数的减小或增加。 第二掺杂剂可以是电活性的,并且可以具有与第一掺杂剂相同的掺杂类型,导致第一半导体区的硬化; 如果第一掺杂剂引起降低,则纯的未掺杂的第一半导体区域的晶格常数增加,并且如果第一掺杂剂分别引起增加,则纯的未掺杂的第一半导体区域的晶格常数降低。