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公开(公告)号：US08303715B2
公开(公告)日：2012-11-06
申请号：US12183763
申请日：2008-07-31
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67248 , H01L21/67754 , H01L21/68742
摘要： A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment.
摘要翻译： 描述了用于处理多个基板的高通量热处理系统。 热处理系统被配置为热处理在干燥的非等离子体环境中化学处理的多个基板。
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公开(公告)号：US20100025368A1
公开(公告)日：2010-02-04
申请号：US12183763
申请日：2008-07-31
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67248 , H01L21/67754 , H01L21/68742
摘要： A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment.
摘要翻译： 描述了用于处理多个基板的高通量热处理系统。 热处理系统被配置为热处理在干燥的非等离子体环境中化学处理的多个基板。
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公开(公告)号：US07964058B2
公开(公告)日：2011-06-21
申请号：US11126369
申请日：2005-05-11
IPC分类号： C23F1/00 , H01L21/306 , C23C16/52
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基底暴露于无等离子体的气态化学物质。 衬底的化学处理化学改变衬底上的暴露表面。
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公开(公告)号：US07651583B2
公开(公告)日：2010-01-26
申请号：US10860149
申请日：2004-06-04
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67178 , H01L21/6719 , H01L21/67751
摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.
摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。
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公开(公告)号：US20090226633A1
公开(公告)日：2009-09-10
申请号：US12470132
申请日：2009-05-21
IPC分类号： B05D3/14 , H01L21/306
CPC分类号： H01L21/67748 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.
摘要翻译： 提出了一种化学氧化物去除（COR）处理系统，其中COR处理系统包括第一处理室和第二处理室。 第一处理室包括化学处理室，其提供具有保护屏障的温度控制室。 第二处理室包括提供具有保护屏障的温度控制室的热处理室。
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公开(公告)号：US08409399B2
公开(公告)日：2013-04-02
申请号：US12470132
申请日：2009-05-21
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67748 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.
摘要翻译： 提出了一种化学氧化物去除（COR）处理系统，其中COR处理系统包括第一处理室和第二处理室。 第一处理室包括化学处理室，其提供具有保护屏障的温度控制室。 第二处理室包括提供具有保护屏障的温度控制室的热处理室。
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7.发明授权High throughput processing system for chemical treatment and thermal treatment and method of operating 有权用于化学处理和热处理的高通量处理系统和操作方法公开(公告)号：US08303716B2
公开(公告)日：2012-11-06
申请号：US12183828
申请日：2008-07-31
申请人： Jay R. Wallace , Thomas Hamelin
发明人： Jay R. Wallace , Thomas Hamelin
CPC分类号： B08B3/08 , H01L21/67109 , H01L21/67248 , H01L21/67742 , H01L21/67754 , H01L21/68742
摘要： A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.
摘要翻译： 描述了具有用于处理多个基板的化学处理系统和热处理系统的高通量处理系统。 化学处理系统被配置为在干燥的非等离子体环境中化学处理多个衬底。 热处理系统被配置为热处理在化学处理系统中化学处理的多个基板。
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公开(公告)号：US20070235138A1
公开(公告)日：2007-10-11
申请号：US11390199
申请日：2006-03-28
申请人： Yuji Tsukamoto , Thomas Hamelin , Yasuhisu Kudo
发明人： Yuji Tsukamoto , Thomas Hamelin , Yasuhisu Kudo
IPC分类号： C23F1/00
CPC分类号： H01L21/6875
摘要： A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.
摘要翻译： 描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。 例如，蚀刻残渣可以包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到基板的高温基座 真空室并构造成支撑基板。 高温基座包括被配置为最小化衬底滑动的刻痕上表面。
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公开(公告)号：US20070235137A1
公开(公告)日：2007-10-11
申请号：US11390196
申请日：2006-03-28
申请人： Yuji Tsukamoto , H. Tomozawa , Sam Kim , Thomas Hamelin
发明人： Yuji Tsukamoto , H. Tomozawa , Sam Kim , Thomas Hamelin
IPC分类号： C23F1/00
CPC分类号： H01L21/6875
摘要： A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.
摘要翻译： 描述了蚀刻后处理系统，用于去除蚀刻过程中形成的光致抗蚀剂和蚀刻残留物。 例如，蚀刻残渣可以包括含卤素材料。 蚀刻后处理系统包括真空室，耦合到真空室的远程自由基产生系统，耦合到自由基产生系统并被配置为在基板上分布反应性基团的自由基气体分配系统，以及耦合到 真空室并且构造成支撑基板。 气体分配系统被配置为有效地将基团输送到基底并且将基团分布在基底上方。
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10.发明授权Method and apparatus for efficient temperature control using a contact volume 有权使用接触体积进行有效温度控制的方法和装置公开(公告)号：US06992892B2
公开(公告)日：2006-01-31
申请号：US10670292
申请日：2003-09-26
申请人： Paul Moroz , Thomas Hamelin
发明人： Paul Moroz , Thomas Hamelin
CPC分类号： H01L21/67109
摘要： A substrate holder for supporting a substrate, including an exterior supporting surface, a cooling component, a heating component positioned adjacent to the supporting surface and between the supporting surface and the cooling component, and a contact volume positioned between the heating component and the cooling component, and formed by a first internal surface and a second internal surface. The thermal conductivity between the heating component and the cooling component is increased when the contact volume is provided with a fluid.
摘要翻译： 一种用于支撑衬底的衬底保持器，包括外部支撑表面，冷却部件，邻近支撑表面定位在支撑表面和支撑表面与冷却部件之间的加热部件以及位于加热部件和冷却部件之间的接触体积 并且由第一内表面和第二内表面形成。 当接触体积设置有流体时，加热部件和冷却部件之间的热导率增加。
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