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公开(公告)号：US06951821B2
公开(公告)日：2005-10-04
申请号：US10705200
申请日：2003-11-12
IPC分类号： C23C16/44 , C25D11/02 , H01L21/00 , H01L21/677 , H01L21/302 , C23C16/00 , F27B5/14 , H01L21/461 , H01L31/0328
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
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公开(公告)号：US20110204029A1
公开(公告)日：2011-08-25
申请号：US13093410
申请日：2011-04-25
IPC分类号： C23F1/00
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 在受控条件下，包括壁温，表面温度和气体压力，将基板暴露于无等离子体的气态化学品。 衬底的化学处理化学改变衬底上的暴露表面。
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公开(公告)号：US07462564B2
公开(公告)日：2008-12-09
申请号：US11337654
申请日：2006-01-24
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , H01L21/0337 , H01L21/31116 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253 , Y10T29/41
摘要： A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
摘要翻译： 一种用于化学氧化物去除（COR）的处理系统和方法，其中所述处理系统包括第一处理室和第二处理室，其中所述第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。
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公开(公告)号：US07079760B2
公开(公告)日：2006-07-18
申请号：US10704969
申请日：2003-11-12
IPC分类号： F26B19/00
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system for thermally treating a substrate including a temperature controlled thermal treatment chamber and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber. A method for thermally treating a substrate is also provided.
摘要翻译： 一种用于热处理包括温度控制的热处理室的衬底和用于支撑用于热处理的衬底的温度受控衬底保持器的处理系统。 衬底保持器与热处理室隔热。 还提供了一种热处理基板的方法。
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公开(公告)号：US07029536B2
公开(公告)日：2006-04-18
申请号：US10705201
申请日：2003-11-12
IPC分类号： H01L21/302
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , H01L21/0337 , H01L21/31116 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253 , Y10T29/41
摘要： A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.
摘要翻译： 一种用于化学氧化物去除（COR）的处理系统和方法，其中所述处理系统包括第一处理室和第二处理室，其中所述第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力在内的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。
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公开(公告)号：US07964058B2
公开(公告)日：2011-06-21
申请号：US11126369
申请日：2005-05-11
IPC分类号： C23F1/00 , H01L21/306 , C23C16/52
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基底暴露于无等离子体的气态化学物质。 衬底的化学处理化学改变衬底上的暴露表面。
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公开(公告)号：US20050269030A1
公开(公告)日：2005-12-08
申请号：US10860149
申请日：2004-06-04
申请人： Martin Kent , Arthur Laflamme , Jay Wallace , Thomas Hamelin
发明人： Martin Kent , Arthur Laflamme , Jay Wallace , Thomas Hamelin
CPC分类号： H01L21/67178 , H01L21/6719 , H01L21/67751
摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.
摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力在内的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。
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公开(公告)号：US20050211386A1
公开(公告)日：2005-09-29
申请号：US11126369
申请日：2005-05-11
申请人： Thomas Hamelin , Jay Wallace , Arthur Laflamme
发明人： Thomas Hamelin , Jay Wallace , Arthur Laflamme
IPC分类号： C23C16/44 , C25D11/02 , H01L21/00 , H01L21/677 , C23F1/00
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基板暴露于无等离子体的气态化学品。 衬底的化学处理化学改变衬底上的暴露表面。
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公开(公告)号：US07651583B2
公开(公告)日：2010-01-26
申请号：US10860149
申请日：2004-06-04
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67178 , H01L21/6719 , H01L21/67751
摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.
摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。
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公开(公告)号：US20090226633A1
公开(公告)日：2009-09-10
申请号：US12470132
申请日：2009-05-21
IPC分类号： B05D3/14 , H01L21/306
CPC分类号： H01L21/67748 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.
摘要翻译： 提出了一种化学氧化物去除（COR）处理系统，其中COR处理系统包括第一处理室和第二处理室。 第一处理室包括化学处理室，其提供具有保护屏障的温度控制室。 第二处理室包括提供具有保护屏障的温度控制室的热处理室。
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