Integrated circuit stack
    1.
    发明授权
    Integrated circuit stack 有权
    集成电路堆栈

    公开(公告)号:US08659898B2

    公开(公告)日:2014-02-25

    申请号:US13568720

    申请日:2012-08-07

    IPC分类号: H05K7/20

    摘要: The invention relates to an integrated circuit stack (1) comprising a plurality of integrated circuit layers (2) and at least one cooling layer (3) arranged in a space between two circuit layers (2). The integrated circuit stack (1) is cooled using a cooling fluid (10) pumped through the cooling layer (3). The invention further relates to a method for configuring of such an integrated circuit stack (1) by optimizing a configuration of the cooling layer (3).

    摘要翻译: 本发明涉及包括多个集成电路层(2)和布置在两个电路层(2)之间的空间中的至少一个冷却层(3)的集成电路堆叠(1)。 使用泵送通过冷却层(3)的冷却流体(10)来冷却集成电路堆(1)。 本发明还涉及通过优化冷却层(3)的配置来配置这种集成电路堆叠(1)的方法。

    Integrated circuit stack
    2.
    发明授权
    Integrated circuit stack 有权
    集成电路堆栈

    公开(公告)号:US08363402B2

    公开(公告)日:2013-01-29

    申请号:US12678298

    申请日:2008-09-17

    IPC分类号: H05K7/20

    摘要: The invention relates to an integrated circuit stack (1) comprising a plurality of integrated circuit layers (2) and at least one cooling layer (3) arranged in a space between two circuit layers (2). The integrated circuit stack (1) is cooled using a cooling fluid (10) pumped through the cooling layer (3). The invention further relates to a method for optimizing a configuration of such an integrated circuit stack (1).

    摘要翻译: 本发明涉及包括多个集成电路层(2)和布置在两个电路层(2)之间的空间中的至少一个冷却层(3)的集成电路堆叠(1)。 使用泵送通过冷却层(3)的冷却流体(10)来冷却集成电路堆(1)。 本发明还涉及一种用于优化这种集成电路堆叠(1)的配置的方法。

    INTEGRATED CIRCUIT STACK
    3.
    发明申请
    INTEGRATED CIRCUIT STACK 有权
    集成电路堆栈

    公开(公告)号:US20120331433A1

    公开(公告)日:2012-12-27

    申请号:US13568720

    申请日:2012-08-07

    IPC分类号: G06F17/50

    摘要: The invention relates to an integrated circuit stack (1) comprising a plurality of integrated circuit layers (2) and at least one cooling layer (3) arranged in a space between two circuit layers (2). The integrated circuit stack (1) is cooled using a cooling fluid (10) pumped through the cooling layer (3). The invention further relates to a method for optimizing a configuration of such an integrated circuit stack (1).

    摘要翻译: 本发明涉及包括多个集成电路层(2)和布置在两个电路层(2)之间的空间中的至少一个冷却层(3)的集成电路堆叠(1)。 使用泵送通过冷却层(3)的冷却流体(10)来冷却集成电路堆(1)。 本发明还涉及一种用于优化这种集成电路堆叠(1)的配置的方法。

    HEAT SPREADER
    5.
    发明申请
    HEAT SPREADER 审中-公开
    散热器

    公开(公告)号:US20130008632A1

    公开(公告)日:2013-01-10

    申请号:US13613881

    申请日:2012-09-13

    IPC分类号: F28D15/00

    摘要: A flexible, self-contained active multi-phase heat spreader apparatus for cooling electronic components, the heat spreader having fluid sealed between two plates and a pumping mechanism to actuate multi-phase flow of the fluid. Thermal energy from an electronic component in contact with the heat spreader is dissipated from a core region via the working fluid to the entire heat spreader, and then to a heat sink. Surface enhancement features located between the two plates aid transfer of thermal energy from a first metal plate into the fluid.

    摘要翻译: 一种用于冷却电子部件的灵活的,独立的主动多相散热装置,散热器具有密封在两个板之间的流体和泵送机构以致动流体的多相流动。 来自与散热器接触的电子部件的热能从核心区域经由工作流体散发到整个散热器,然后散热到散热器。 位于两个板之间的表面增强特征有助于将热能从第一金属板传递到流体中。

    Patterned structure for a thermal interface
    8.
    发明授权
    Patterned structure for a thermal interface 有权
    用于热界面的图案化结构

    公开(公告)号:US08327540B2

    公开(公告)日:2012-12-11

    申请号:US12538797

    申请日:2009-08-10

    IPC分类号: B21D53/02

    摘要: A method for producing a plate with a first face with protrusions confined by first and second grooves includes steps of: etching recessed zones into a plate; depositing a photoresist layer on the plate; forming a passivation layer over the photoresist layer; removing the passivation layer at the bottom of the recessed zones; electroplating metal in the recessed zones; removing the passivation layer; removing the photoresist layer; and removing the semiconductor material to expose the first and second grooves.

    摘要翻译: 一种制造具有第一面的板的方法,具有由第一和第二槽限定的突起,包括以下步骤:将凹陷区域蚀刻成板; 在所述板上沉积光致抗蚀剂层; 在光致抗蚀剂层上形成钝化层; 去除凹陷区域底部的钝化层; 电镀金属在凹陷区域; 去除钝化层; 去除光致抗蚀剂层; 以及去除所述半导体材料以暴露所述第一和第二凹槽。

    PATTERNED STRUCTURE FOR A THERMAL INTERFACE
    9.
    发明申请
    PATTERNED STRUCTURE FOR A THERMAL INTERFACE 有权
    热界面的图案结构

    公开(公告)号:US20100037461A1

    公开(公告)日:2010-02-18

    申请号:US12538797

    申请日:2009-08-10

    IPC分类号: B21D53/02 H01L23/40

    摘要: A method for producing a plate with a first face with protrusions confined by first and second grooves includes steps of: etching recessed zones into a plate; depositing a photoresist layer on the plate; forming a passivation layer over the photoresist layer; removing the passivation layer at the bottom of the recessed zones; electroplating metal in the recessed zones; removing the passivation layer; removing the photoresist layer; and removing the semiconductor material to expose the first and second grooves.

    摘要翻译: 一种制造具有第一面的板的方法,具有由第一和第二槽限定的突起,包括以下步骤:将凹陷区域蚀刻成板; 在所述板上沉积光致抗蚀剂层; 在光致抗蚀剂层上形成钝化层; 去除凹陷区域底部的钝化层; 电镀金属在凹陷区域; 去除钝化层; 去除光致抗蚀剂层; 以及去除所述半导体材料以暴露所述第一和第二凹槽。