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    Device and method of positionally accurate implantation of individual particles in a substrate surface
    1.
    发明申请
    Device and method of positionally accurate implantation of individual particles in a substrate surface 失效
    将单个颗粒定位在衬底表面中的装置和方法

    公开(公告)号：US20050077486A1

    公开(公告)日：2005-04-14

    申请号：US10683488

    申请日：2003-10-09

    申请人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

    发明人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

    IPC分类号： H01J37/304

    CPC分类号： H01J37/3172 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/30488 ,  H01J2237/3171 ,  H01J2237/31737

    摘要： A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method (FIG. 1).

    摘要翻译： 描述了用于将单个颗粒位置精确地植入到衬底表面（1a）中的装置和方法。 用于将粒子束引导到衬底表面（1a）上的隔膜和以pn结形式设置在其上的检测器，用于确定在将颗粒撞击到衬底表面（1a）上时产生的二次电子流。 尖端（4），其形成在一侧安装的柔性臂（2）的自由端部上。 该装置是根据AFM方法（图1）操作的扫描装置的一部分。

    Shadow mask and method for producing a shadow mask
    2.
    发明授权
    Shadow mask and method for producing a shadow mask 失效
    阴影掩模和产生荫罩的方法

    公开(公告)号：US07183043B2

    公开(公告)日：2007-02-27

    申请号：US10344710

    申请日：2001-08-14

    申请人： Jan Meijer ,  Andreas Stephan ,  Ulf Weidenmuller ,  Ivo Rangelow

    发明人： Jan Meijer ,  Andreas Stephan ,  Ulf Weidenmuller ,  Ivo Rangelow

    IPC分类号： G03F1/00 ,  G03C5/00

    CPC分类号： G03F1/20

    摘要： The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 μm to about 200 μm and apertures in the shadow mask have lateral dimensions from about 0.5 μm to about 3 μm.

    摘要翻译： 所公开的装置指向用于离子束的阴影掩模，所述阴影掩模包含布置在其中的孔图案的硅晶片，其中所述硅晶片设置在与入射离子束相对的一侧，金属涂层停止所述离子束并散发热量， 其中硅晶片的有孔区域具有约20μm至约200μm的厚度，并且荫罩中的孔径具有约0.5μm至约3μm的横向尺寸。

    DEVICE AND METHOD FOR AN ATOMIC FORCE MICROSCOPE FOR THE STUDY AND MODIFICATION OF SURFACE PROPERTIES
    4.
    发明申请
    DEVICE AND METHOD FOR AN ATOMIC FORCE MICROSCOPE FOR THE STUDY AND MODIFICATION OF SURFACE PROPERTIES 有权
    用于研究和修改表面特性的原子力显微镜的装置和方法

    公开(公告)号：US20110055985A1

    公开(公告)日：2011-03-03

    申请号：US12747617

    申请日：2008-12-10

    申请人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

    发明人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

    IPC分类号： G01Q60/24 ,  G01J3/44 ,  G01B11/30

    CPC分类号： G01Q60/06 ,  G01Q10/045 ,  G01Q20/04 ,  G01Q30/02

    摘要： The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

    摘要翻译： 本发明涉及一种用于研究和/或修饰表面性质的原子力显微镜（AFM）装置。 该装置包括具有集成的压阻传感器的悬臂（柔性条），集成双模致动器和测量尖端。 测量头带有至少两个金属电极，可通过电气端子激活。 测量头和/或悬臂具有至少一个纳米孔，同步加速器辐射或激光通过该孔被引导到待研究的材料表面上。 此外，本发明涉及一种用于研究和改进表面性质和表面近端性质的方法，其可以使用这种装置来执行。 为此，依次执行原子力显微镜（AFM），表面增强拉曼散射（SERS），光发射光谱（XPS，XAS）和局部曝光的材料修饰，或同时使用相同的器件。

    Device and method for an atomic force microscope for the study and modification of surface properties
    5.
    发明授权
    Device and method for an atomic force microscope for the study and modification of surface properties 有权
    用于研究和修改表面性质的原子力显微镜的装置和方法

    公开(公告)号：US08479311B2

    公开(公告)日：2013-07-02

    申请号：US12747617

    申请日：2008-12-10

    申请人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

    发明人： Stefan Kubsky ,  Deirdre Olynick ,  Peter Schuck ,  Jan Meijer ,  Ivo W. Rangelow

    IPC分类号： G01Q60/24

    CPC分类号： G01Q60/06 ,  G01Q10/045 ,  G01Q20/04 ,  G01Q30/02

    摘要： The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

    摘要翻译： 本发明涉及一种用于研究和/或修饰表面性质的原子力显微镜（AFM）装置。 该装置包括具有集成的压阻传感器的悬臂（柔性条），集成双模致动器和测量尖端。 测量头带有至少两个金属电极，可通过电气端子激活。 测量头和/或悬臂具有至少一个纳米孔，同步加速器辐射或激光通过该孔被引导到待研究的材料表面上。 此外，本发明涉及一种用于研究和改进表面性质和表面近端性质的方法，其可以使用这种装置来执行。 为此，依次执行原子力显微镜（AFM），表面增强拉曼散射（SERS），光发射光谱（XPS，XAS）和局部曝光的材料修饰，或同时使用相同的器件。