公开(公告)号：US20050077486A1

公开(公告)日：2005-04-14

申请号：US10683488

申请日：2003-10-09

申请人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

发明人： Thomas Schenkel ,  Ivo Rangelow ,  Jan Meijer

IPC分类号： H01J37/304

CPC分类号： H01J37/3172 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/30438 ,  H01J2237/30488 ,  H01J2237/3171 ,  H01J2237/31737

摘要： A device and a method for positionally accurate implantation of individual particles in a substrate surface (1a) are described. A diaphragm for a particle beam to be directed onto the substrate surface (1a) and a detector provided thereon in the form of a p-n junction for determining a secondary electron flow produced upon impact of a particle onto the substrate surface (1a) are provided on a tip (4) which is formed on a free end portion of a flexible arm (2) to be mounted on one side. The device is part of a scanning device operating according to the AFM method (FIG. 1).

摘要翻译： 描述了用于将单个颗粒位置精确地植入到衬底表面（1a）中的装置和方法。 用于将粒子束引导到衬底表面（1a）上的隔膜和以pn结形式设置在其上的检测器，用于确定在将颗粒撞击到衬底表面（1a）上时产生的二次电子流。 尖端（4），其形成在一侧安装的柔性臂（2）的自由端部上。 该装置是根据AFM方法（图1）操作的扫描装置的一部分。

公开(公告)号：US07183043B2

公开(公告)日：2007-02-27

申请号：US10344710

申请日：2001-08-14

申请人： Jan Meijer ,  Andreas Stephan ,  Ulf Weidenmuller ,  Ivo Rangelow

发明人： Jan Meijer ,  Andreas Stephan ,  Ulf Weidenmuller ,  Ivo Rangelow

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/20

摘要： The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 μm to about 200 μm and apertures in the shadow mask have lateral dimensions from about 0.5 μm to about 3 μm.

摘要翻译： 所公开的装置指向用于离子束的阴影掩模，所述阴影掩模包含布置在其中的孔图案的硅晶片，其中所述硅晶片设置在与入射离子束相对的一侧，金属涂层停止所述离子束并散发热量， 其中硅晶片的有孔区域具有约20μm至约200μm的厚度，并且荫罩中的孔径具有约0.5μm至约3μm的横向尺寸。

公开(公告)号：US20130044846A1

公开(公告)日：2013-02-21

申请号：US13451475

申请日：2012-04-19

申请人： Thomas Schenkel ,  Arun Persaud ,  Rehan Kapadia ,  Ali Javey ,  Constance Chang-Hasnain ,  Ivo Rangelow ,  Joe Kwan

发明人： Thomas Schenkel ,  Arun Persaud ,  Rehan Kapadia ,  Ali Javey ,  Constance Chang-Hasnain ,  Ivo Rangelow ,  Joe Kwan

IPC分类号： G21B1/11 ,  B82B1/00

CPC分类号： H05H3/06 ,  G21G4/02 ,  H05H6/00

摘要： A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

摘要翻译： 中子发生器包括导电衬底，该导电衬底包括具有独立尖端的多个导电纳米结构和用于将原子种类引入到独立尖端附近的原子物质的源。 离开衬底的目标物体相对于衬底具有电压偏置，以将离子化的原子物质离子化并加速至目标物。 目标包括能够与电离原子物质进行核聚变反应以产生作为反应副产物的一个或多个中子的元素。

公开(公告)号：US09161429B2

公开(公告)日：2015-10-13

申请号：US13451475

申请日：2012-04-19

申请人： Thomas Schenkel ,  Arun Persaud ,  Rehan Kapadia ,  Ali Javey ,  Constance Chang-Hasnain ,  Ivo Rangelow ,  Joe Kwan

发明人： Thomas Schenkel ,  Arun Persaud ,  Rehan Kapadia ,  Ali Javey ,  Constance Chang-Hasnain ,  Ivo Rangelow ,  Joe Kwan

IPC分类号： G21G4/02 ,  H05H3/06 ,  H05H6/00

CPC分类号： H05H3/06 ,  G21G4/02 ,  H05H6/00

摘要： A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

摘要翻译： 中子发生器包括导电衬底，该导电衬底包括具有独立尖端的多个导电纳米结构和用于将原子种类引入到独立尖端附近的原子物质的源。 离开衬底的目标物体相对于衬底具有电压偏置，以将离子化的原子物质离子化并加速至目标物。 目标包括能够与电离原子物质进行核聚变反应以产生作为反应副产物的一个或多个中子的元素。

公开(公告)号：US20070248892A1

公开(公告)日：2007-10-25

申请号：US11572046

申请日：2005-07-14

申请人： Ivo Rangelow

发明人： Ivo Rangelow

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F9/7061 ,  B29C64/135 ,  B82Y10/00 ,  G01N23/046 ,  G01Q20/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q60/34 ,  G01Q70/06 ,  G01Q80/00 ,  G03F9/7038 ,  G03F9/7042 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49131 ,  Y10T29/49133 ,  Y10T29/49744 ,  Y10T29/49778 ,  Y10T29/53261 ,  Y10T29/53265

摘要： A method and apparatus is described for aligning a first article relative to a second article, for example for aligning a nanoimprint template with a semiconductor wafer. The method comprises the steps of: providing said second article with at least one flexible structure fixed relative thereto at least one point, providing a first article having at least one surface relief marking thereon, providing a detector for measuring an interaction of the flexible structure with the surface relief marking and generating detector signals relating to said interaction, identifying with the help of the detector signals the position of the flexible structure and thus of the second article with respect to the surface relief marking and generating relative movement between the first and second articles to achieve a desired alignment between the first and second articles defined by the surface relief marking. In this method and apparatus the flexible structure is brought into contact with the surface relief marking.

摘要翻译： 描述了用于使第一制品相对于第二制品对准的方法和装置，例如用于使纳米压印模板与半导体晶片对准。 该方法包括以下步骤：为所述第二制品提供至少一个相对于其固定的柔性结构，至少提供一个点，提供第一制品，其上具有至少一个表面浮雕标记，提供检测器，用于测量柔性结构与 与所述相互作用相关的表面浮雕标记和产生检测器信号，借助于检测器的识别来识别柔性结构的位置，从而相对于表面浮雕标记信号第二制品的位置，并产生第一和第二物品之间的相对运动 以实现由表面浮雕标记限定的第一和第二物品之间的期望对准。 在该方法和装置中，柔性结构与表面浮雕标记接触。

公开(公告)号：US10025207B2

公开(公告)日：2018-07-17

申请号：US13102469

申请日：2011-05-06

申请人： Ivo Rangelow

发明人： Ivo Rangelow

IPC分类号： G03F9/00 ,  G01Q60/16 ,  G01Q20/00 ,  G01Q70/06 ,  G01Q20/04 ,  G01Q60/34 ,  G01N23/046 ,  B29C64/135 ,  B82Y10/00 ,  G01Q80/00

摘要： A method for aligning a first article relative to a second article. The second article is provided with at least one flexible structure fixed to the second article at one point while the first article includes at least one surface relief marking. A detector measures the interaction between the flexible structure and surface relief marking and generates detector signals relative to that interaction to achieve alignment between the first and second articles.

公开(公告)号：US08546264B2

公开(公告)日：2013-10-01

申请号：US11421958

申请日：2006-06-02

申请人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

发明人： Deirdre Olynick ,  Ivo Rangelow ,  Weilun Chao

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30655

摘要： A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

摘要翻译： 已经开发了基于具有气体切割的高纵横比反应离子蚀刻的硅微加工技术的方法，其能够产生基本上无扇形，平滑的侧壁表面。 该方法使用蚀刻和沉积气体前体的精确控制，交替（或切碎）的气流产生能够具有高各向异性的可控侧壁钝化。 侧壁钝化的动态控制通过仔细控制氟化物存在与慢化剂气体如CH4，并使用CF2源控制钝化速率和化学计量来实现。 以这种方式，侧壁聚合物沉积厚度被非常好地控制，从而将侧壁波纹减小到非常小的水平。 通过将电感耦合等离子体与受控氟碳化合物结合，可以产生良好的具有非常低的侧壁粗糙度的垂直结构的控制。 结果显示了对于10nm特征的长宽比为20:1的硅特征，适用于在50nm以下的纳米应用。 相比之下，以前的传统气体斩波技术已经在50到100nm的粗糙度的范围内产生波纹或扇形的侧壁。

公开(公告)号：US08128282B2

公开(公告)日：2012-03-06

申请号：US11813308

申请日：2006-01-04

申请人： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

发明人： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

IPC分类号： G01K5/62

CPC分类号： G01J5/40 ,  B81B3/0018 ,  B81B2201/0278 ,  G01J5/44

摘要： A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

摘要翻译： 公开了一种具有在温度变化影响下可变形的装置（3）的微系统部件。 该装置包括具有不同热膨胀系数和不同导热率的至少一个第一（4,5）和第二（8）元件。 元件（4,5; 8）在物理上是分开的并且彼此连接并且连接，使得装置（3）呈现取决于温度的弯曲状态。

公开(公告)号：US07141808B2

公开(公告)日：2006-11-28

申请号：US10508478

申请日：2003-03-14

申请人： Ivo Rangelow ,  Tzwetan Ivanov ,  Peter Hudek ,  Olaf Fortagne

发明人： Ivo Rangelow ,  Tzwetan Ivanov ,  Peter Hudek ,  Olaf Fortagne

IPC分类号： H01J37/30

CPC分类号： H01J37/3174 ,  G01Q80/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J37/3177

摘要： The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.

摘要翻译： 本发明涉及无掩模微光刻的装置和方法。 几个微结构的悬臂（2）布置在阵列（26）中，并且致动器集成在阵列（26）的每个悬臂（2）中。 提供电源和控制单元（24），所述单元调整悬臂（6）相对于将通过适当电压构造的表面（4）的距离。 针（6）的每一点连接到所述电源和控制单元（24）。 为了实现本发明的方法，具有悬臂的阵列（26）与每个表面（6）相连接的表面（4）与表面（4）接触，以使结构的点 针（6）布置成靠近要被构造的表面（4）。

公开(公告)号：US20060238206A1

公开(公告)日：2006-10-26

申请号：US10545776

申请日：2004-02-16

申请人： Lukas Eng ,  Ivo Rangelow

发明人： Lukas Eng ,  Ivo Rangelow

IPC分类号： G01R31/302

CPC分类号： G01Q60/30 ,  G01Q10/045 ,  G01Q20/04

摘要： A measuring system for the combined scanning and analysis of microtechnical components comprising electrical contacts contains a cantilever with an electrically conductive probe tip, a piezoresistive sensor that is integrated into the cantilever and a heating-wire actuator that is located in the vicinity of the probe tip. The heating-wire actuator induces mechanical oscillations in the probe tip during scanning operations and can be used during the analyses to produce a preselected tracking force, with which the probe tip lies on the component. The sensor is used during the scanning operation according to AFM methods to maintain a constant distance between the probe tip and the surface of the component and during the analyses to measure the tracking force of the probe tip on the component, and/or to adjust said force with the aid of the heating-wire actuator. A device equipped with a measuring system of this type for the combined scanning and analysis of microtechnical components is also disclosed.

摘要翻译： 用于组合扫描和分析包括电触点的微技术部件的测量系统包含具有导电探针尖端的悬臂，集成到悬臂中的压阻传感器和位于探针尖端附近的加热线致动器 。 加热线致动器在扫描操作期间引起探针尖端中的机械振荡，并且可以在分析期间使用以产生预选的跟踪力，探针尖位于组件上。 根据AFM方法在扫描操作期间使用传感器来保持探头尖端和部件表面之间的恒定距离，并且在分析期间测量探头尖端在部件上的跟踪力，和/或调整所述 借助于加热线驱动器的力。 还公开了一种装备有这种类型的测量系统以用于微技术组件的组合扫描和分析的装置。