摘要:
The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.
摘要:
The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.
摘要:
A method for analysis of an object in microlithography. The steps of the method include providing an aerial image measurement system (AIMS) that consists of at least two imaging steps; detecting the image output of the AIMS; and employing a correction filter to correct the detected image with respect to the transfer behavior of the second or other imaging steps. An AIMS apparatus to carry out the method is also defined.
摘要:
During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane. According to the invention, the diaphragm is embodied in such a way that the resultant intensity distribution of the projection light has at least one further intensity value between a minimum and a maximum intensity value.
摘要:
A mask inspection microscope is provided for characterizing a mask having a feature. The mask inspection microscope is configured to generate an aerial image of at least one segment of the feature of the mask, acquire a spatially resolved intensity distribution of the aerial image, and determine a total intensity from the intensities of at least one region of the aerial image.
摘要:
During mask inspection it is necessary to identify defects which also occur during wafer exposure. Therefore, the aerial images generated in the resist and on the detector have to be as far as possible identical. In order to achieve an equivalent image generation, during mask inspection the illumination and, on the object side, the numerical aperture are adapted to the scanner used. The invention relates to a mask inspection microscope for variably setting the illumination. It serves for generating an image of the structure (150) of a reticle (145) arranged in an object plane in a field plane of the mask inspection microscope. It comprises a light source (5) that emits projection light, at least one illumination beam path (3, 87, 88), and a diaphragm for generating a resultant intensity distribution of the projection light in a pupil plane (135) of the illumination beam path (3, 87, 88) that is optically conjugate with respect to the object plane. According to the invention, the diaphragm is embodied in such a way that the resultant intensity distribution of the projection light has at least one further intensity value between a minimum and a maximum intensity value.
摘要:
A mask inspection microscope is provided for characterizing a mask having a feature. The mask inspection microscope is configured to generate an aerial image of at least one segment of the feature of the mask, acquire a spatially resolved intensity distribution of the aerial image, and determine a total intensity from the intensities of at least one region of the aerial image.