公开(公告)号：US06746927B2

公开(公告)日：2004-06-08

申请号：US10422492

申请日：2003-04-24

申请人： Thorsten Kammler ,  Karsten Wieczorek ,  Christof Streck

发明人： Thorsten Kammler ,  Karsten Wieczorek ,  Christof Streck

IPC分类号： H01L21336

CPC分类号： H01L21/28052 ,  H01L21/823835 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656

摘要： A method is provided for forming polysilicon line structures, such as gate electrodes of field effect transistors, according to which oxide spacers are removed from the sidewalls of the poly gate lines before depositing the liner oxide. Accordingly, after formation of the final spacers, the polysilicon line sidewalls are no longer covered with spacer oxide but all silicide pre-cleans can clear the poly sidewalls completely which thus leads to improved silicidation conditions, resulting in gate lines exhibiting very low sheet resistivity.

公开(公告)号：US07307026B2

公开(公告)日：2007-12-11

申请号：US10786388

申请日：2004-02-25

申请人： Christof Streck ,  Guido Koerner ,  Thorsten Kammler

发明人： Christof Streck ,  Guido Koerner ,  Thorsten Kammler

IPC分类号： H01L21/302 ,  H01L21/31

CPC分类号： H01L29/66628 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budget in manufacturing sophisticated field effect transistor elements. The etch recipes used enable a controlled removal of material, wherein other device components are not unduly degraded by the oxidation and etch process.

摘要翻译： 根据本发明，湿化学氧化和蚀刻工艺循环允许在升高的源极和漏极区域的外延生长之前有效地去除污染的硅表面层，由此有效地减少制造复杂的场效应晶体管元件的总热量预算。 所使用的蚀刻配方能够控制材料的去除，其中其它器件组件不会被氧化和蚀刻工艺过度降解。

公开(公告)号：US20050026367A1

公开(公告)日：2005-02-03

申请号：US10786388

申请日：2004-02-25

申请人： Christof Streck ,  Guido Koerner ,  Thorsten Kammler

发明人： Christof Streck ,  Guido Koerner ,  Thorsten Kammler

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/66628 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budget in manufacturing sophisticated field effect transistor elements. The etch recipes used enable a controlled removal of material, wherein other device components are not unduly degraded by the oxidation and etch process.

摘要翻译： 根据本发明，湿化学氧化和蚀刻工艺循环允许在升高的源极和漏极区域的外延生长之前有效地去除污染的硅表面层，由此有效地减少制造复杂的场效应晶体管元件的总热量预算。 所使用的蚀刻配方能够控制材料的去除，其中其它器件组件不会被氧化和蚀刻工艺过度降解。

公开(公告)号：US20120329239A1

公开(公告)日：2012-12-27

申请号：US13167558

申请日：2011-06-23

申请人： Thorsten Kammler ,  Joerg Radecker ,  Christof Streck

发明人： Thorsten Kammler ,  Joerg Radecker ,  Christof Streck

IPC分类号： H01L21/762

CPC分类号： H01L21/76224

摘要： Methods and provided for fabricating a semiconductor IC having a hardened shallow trench isolation (STI). In accordance with one embodiment the method includes providing a semiconductor substrate and forming an etch mask having an opening exposing a portion the semiconductor substrate. The exposed portion is etched to form a trench extending into the semiconductor substrate and an oxide is deposited to at least partially fill the trench. At least the surface portion of the oxide is plasma nitrided to form a nitrided oxide layer and then the etch mask is removed.

摘要翻译： 提供用于制造具有硬化浅沟槽隔离（STI）的半导体IC的方法。 根据一个实施例，该方法包括提供半导体衬底并形成具有暴露半导体衬底的一部分的开口的蚀刻掩模。 蚀刻暴露部分以形成延伸到半导体衬底中的沟槽，并且沉积氧化物以至少部分地填充沟槽。 至少氧化物的表面部分被等离子体氮化以形成氮化氧化物层，然后去除蚀刻掩模。

公开(公告)号：US08569143B2

公开(公告)日：2013-10-29

申请号：US13167558

申请日：2011-06-23

申请人： Thorsten Kammler ,  Joerg Radecker ,  Christof Streck

发明人： Thorsten Kammler ,  Joerg Radecker ,  Christof Streck

IPC分类号： H01L21/762

CPC分类号： H01L21/76224

摘要： Methods and provided for fabricating a semiconductor IC having a hardened shallow trench isolation (STI). In accordance with one embodiment the method includes providing a semiconductor substrate and forming an etch mask having an opening exposing a portion the semiconductor substrate. The exposed portion is etched to form a trench extending into the semiconductor substrate and an oxide is deposited to at least partially fill the trench. At least the surface portion of the oxide is plasma nitrided to form a nitrided oxide layer and then the etch mask is removed.

摘要翻译： 提供用于制造具有硬化浅沟槽隔离（STI）的半导体IC的方法。 根据一个实施例，该方法包括提供半导体衬底并形成具有暴露半导体衬底的一部分的开口的蚀刻掩模。 蚀刻暴露部分以形成延伸到半导体衬底中的沟槽，并且沉积氧化物以至少部分地填充沟槽。 至少氧化物的表面部分被等离子体氮化以形成氮化氧化物层，然后去除蚀刻掩模。

公开(公告)号：US07595269B2

公开(公告)日：2009-09-29

申请号：US11467216

申请日：2006-08-25

申请人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

发明人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.

摘要翻译： 通过在被暴露的铜表面上形成含有锡和镍的铜合金，其被处理为在其上具有氧化铜，可以提供可靠且高效的覆盖层。 含锡和镍的铜合金可以在气态环境中基于氢化锡和镍，一氧化碳在热驱动反应中形成。

公开(公告)号：US07413985B2

公开(公告)日：2008-08-19

申请号：US11853994

申请日：2007-09-12

申请人： Christof Streck ,  Volker Kahlert

发明人： Christof Streck ,  Volker Kahlert

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  H01L21/76867 ,  H01L21/76886

摘要： By forming a copper/silicon/nitrogen alloy in a surface portion of a copper-containing region on the basis of a precursor layer, highly controllable and reliable process conditions may be established. The precursor layer may be formed on the basis of a liquid precursor solution, which may exhibit a substantially self-aligned and self-limiting deposition behavior.

摘要翻译： 通过基于前体层在含铜区域的表面部分中形成铜/硅/氮合金，可以建立高度可控和可靠的工艺条件。 前体层可以基于液体前体溶液形成，其可以表现出基本上自对准和自限制的沉积行为。

公开(公告)号：US20070123043A1

公开(公告)日：2007-05-31

申请号：US11467216

申请日：2006-08-25

申请人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

发明人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76888 ,  H01L2924/0002 ,  H01L2924/00

摘要： By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.

摘要翻译： 通过在被暴露的铜表面上形成含有锡和镍的铜合金，其被处理为在其上具有氧化铜，可以提供可靠且高效的覆盖层。 含锡和镍的铜合金可以在气态环境中基于氢化锡和镍，一氧化碳在热驱动反应中形成。

公开(公告)号：US20070045226A1

公开(公告)日：2007-03-01

申请号：US11419540

申请日：2006-05-22

申请人： Volker Kahlert ,  Christof Streck ,  Patrick Press

发明人： Volker Kahlert ,  Christof Streck ,  Patrick Press

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302 ,  H01L21/461 ,  C03C15/00

CPC分类号： H01L21/02057 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding sputter etch process, wherein, in a particular embodiment, an additional oxidation process is performed to efficiently remove any silicon contaminations and surface impurities by a subsequent wet chemical treatment on the basis of HF, which is followed by the metal deposition.

摘要翻译： 通过减少在半导体器件中形成金属硅化物的顺序期间的粒子轰击的影响，可以提高缺陷率和金属硅化物的均匀性。 为了这个目的，金属可以在没有紧接在前的溅射蚀刻工艺的情况下沉积，其中在特定实施例中，执行额外的氧化工艺以通过基于HF的随后的湿化学处理来有效地去除任何硅污染物和表面杂质 ，其后是金属沉积。

公开(公告)号：US20070004203A1

公开(公告)日：2007-01-04

申请号：US11380085

申请日：2006-04-25

申请人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

发明人： Christof Streck ,  Volker Kahlert ,  Alexander Hanke

IPC分类号： H01L21/44 ,  C23C16/16

CPC分类号： C23C16/16 ,  C23C10/04 ,  C23C26/00 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/28562 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6659

摘要： Nickel silicide is formed on the basis of a gaseous precursor, such as nickel tetra carbonyl, wherein the equilibrium of the decomposition of this gas may be controlled to obtain a highly selective nickel silicide formation rate. Moreover, any etch step for removing excess nickel may be avoided, since only minute amounts of nickel may form on exposed surfaces, which may then be effectively removed by correspondingly shifting the equilibrium. Consequently, reduced process complexity, enhanced controllability and enhanced tool lifetime may be obtained.

摘要翻译： 镍硅化物基于气态前体如四羰基镍形成，其中可以控制该气体的分解平衡以获得高度选择性的硅化镍形成速率。 此外，可以避免用于去除过量镍的任何蚀刻步骤，因为在暴露的表面上只能形成微量的镍，然后可以通过相应地平衡平衡来有效地去除镍。 因此，可以获得降低的工艺复杂性，增强的可控性和增加的刀具寿命。