公开(公告)号：US20080311342A1

公开(公告)日：2008-12-18

申请号：US11906447

申请日：2007-10-02

申请人： Timo Muller ,  Martin Weber ,  Gudrun Kissinger

发明人： Timo Muller ,  Martin Weber ,  Gudrun Kissinger

IPC分类号： B32B3/24 ,  C01B33/021

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B33/02 ,  Y10T428/24298 ,  Y10T428/26

摘要： Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius, crystal lattice vacancy agglomerates of at least 30 nm in a density ≦6·103 cm−3, crystal lattice vacancy agglomerates of from 10 nm to 30 nm in a density of 1·105 cm−3 to 3·107 cm−3, OSF seeds in a density of 0 to 10 cm−2, and an average bulk BMD density of 5·108 cm−3 to 5·109 cm−3, which varies at most by a factor of 10 radially over the entire silicon wafer, and a BMD-free layer on the front side, wherein the first BMD is found at a depth of at least 5 μm and on average at a depth of at least 8 μm.

摘要翻译： 其晶格空位为整体体积的硅晶片为普遍点缺陷型，具有宽度为晶片半径的至少80％的旋转对称区域，密度<= 6.103至少为30nm的晶格空位聚集体 cm-3，密度为1.105cm-3至3.107cm-3的10nm至30nm的晶格空位团聚体，密度为0至10cm -2的OSF晶种，平均体积BMD密度为5.108 cm -3至5.109cm -3，其在整个硅晶片上径向上变化10倍，并且在前侧上变化为不含BMD的层，其中在至少5μm的深度处发现第一BMD 平均至少8 m的深度。

公开(公告)号：US07964275B2

公开(公告)日：2011-06-21

申请号：US11906447

申请日：2007-10-02

申请人： Timo Müller ,  Martin Weber ,  Gudrun Kissinger

发明人： Timo Müller ,  Martin Weber ,  Gudrun Kissinger

IPC分类号： G11B11/105 ,  C30B15/14 ,  C30B15/00 ,  C01B33/02

CPC分类号： C30B15/203 ,  C30B29/06 ,  C30B33/02 ,  Y10T428/24298 ,  Y10T428/26

摘要： Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius, crystal lattice vacancy agglomerates of at least 30 nm in a density ≦6·103 cm−3, crystal lattice vacancy agglomerates of from 10 nm to 30 nm in a density of 1·105 cm−3 to 3·107 cm−3, OSF seeds in a density of 0 to 10 cm−2, and an average bulk BMD density of 5·108 cm−3 to 5·109 cm−3, which varies at most by a factor of 10 radially over the entire silicon wafer, and a BMD-free layer on the front side, wherein the first BMD is found at a depth of at least 5 μm and on average at a depth of at least 8 μm.

摘要翻译： 整个体积的硅晶片的晶格空位是普遍的点缺陷型，具有宽度为晶片半径的至少80％的旋转对称区域，密度为nlE的晶格空位团聚体至少为30nm; 6 ·103cm -3，密度为1×105cm -3〜3×10 7 cm -3的10nm〜30nm的晶格空位团聚体，密度为0〜10cm -2的OSF种子， 平均体积BMD密度为5×10 8 cm -3至5×10 9 cm -3，其在整个硅晶片上径向上变化至多10倍，而在前侧具有无BMD层，其中第一BMD 发现深度至少为5μm，平均深度至少为8μm。

公开(公告)号：US20100059861A1

公开(公告)日：2010-03-11

申请号：US12548862

申请日：2009-08-27

申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

IPC分类号： H01L29/30 ,  H01L21/18

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a PV region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmim of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和PV区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片的OSF密度小于10cm -2，本体的BMD密度为至少3.5×10 8 cm -3，BMD密度的波动范围BMDmax / BMDmim的径向分布不大于3 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

公开(公告)号：US08398766B2

公开(公告)日：2013-03-19

申请号：US12548862

申请日：2009-08-27

申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

IPC分类号： C30B15/02

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和Pv区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片具有小于10cm -2的OSF密度，至少3.5×10 8 cm -3的本体的BMD密度以及具有不大于3的波动范围BMDmax / BMDmin的BMD密度的径向分布 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

公开(公告)号：US09005563B2

公开(公告)日：2015-04-14

申请号：US13191534

申请日：2011-07-27

申请人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

发明人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

IPC分类号： C01B33/02 ,  F24J3/00 ,  C30B33/02 ,  C30B29/06 ,  H01L21/322

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02

摘要： Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface.

摘要翻译： 氧化浓度为5×1017〜7.5×1017cm-3的硅片在以下热处理后具有以下BMD密度：交替进行处理3小时后的至少1×10 8 cm -3的BMD密度 在780℃下，随后在1000℃下进行16小时，并且从起始温度500℃以1K /分钟的加热速率加热硅晶片之后，BMD密度为至少1×10 9 cm -3。 ℃至目标温度为1000℃，随后在1000℃下保持16小时。 通过用闪光灯照射加热的晶片的方法制备晶片，其传递能量，其是熔化晶片表面所需的能量密度的50至100％。

公开(公告)号：US20120039786A1

公开(公告)日：2012-02-16

申请号：US13191534

申请日：2011-07-27

申请人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

发明人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

IPC分类号： C01B33/02 ,  F24J3/00

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02

摘要： Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface.

摘要翻译： 氧化浓度为5×1017〜7.5×1017cm-3的硅片在以下热处理后具有以下BMD密度：交替进行处理3小时后的至少1×10 8 cm -3的BMD密度 在780℃下，随后在1000℃下进行16小时，并且从起始温度500℃以1K /分钟的加热速率加热硅晶片之后，BMD密度为至少1×10 9 cm -3。 ℃至目标温度为1000℃，随后在1000℃下保持16小时。 通过用闪光灯照射加热的晶片的方法制备晶片，其传递能量，其是熔化晶片表面所需的能量密度的50至100％。