公开(公告)号：US08241421B2

公开(公告)日：2012-08-14

申请号：US12895950

申请日：2010-10-01

申请人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

发明人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

IPC分类号： H01L21/00

CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/04 ,  C30B15/20 ,  C30B15/206 ,  Y10T428/12528

摘要： The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.

摘要翻译： 由含有加氢的硅衬底晶片的空隙产生的外延层缺陷通过以下方式制造外延晶片的方法被抑制：通过切克劳斯基法生长硅晶体，包括向硅熔体中加入氢和氮，并从硅熔体 氮浓度为3×1013cm-3至3×1014cm-3的硅晶体，通过加工硅晶体制备硅衬底，并在硅衬底的表面形成外延层。

公开(公告)号：US08398766B2

公开(公告)日：2013-03-19

申请号：US12548862

申请日：2009-08-27

申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

IPC分类号： C30B15/02

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和Pv区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片具有小于10cm -2的OSF密度，至少3.5×10 8 cm -3的本体的BMD密度以及具有不大于3的波动范围BMDmax / BMDmin的BMD密度的径向分布 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

公开(公告)号：US20110084366A1

公开(公告)日：2011-04-14

申请号：US12895950

申请日：2010-10-01

申请人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

发明人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

IPC分类号： H01L23/00 ,  H01L21/71

CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/04 ,  C30B15/20 ,  C30B15/206 ,  Y10T428/12528

摘要： The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by:growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3,preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.

摘要翻译： 由含有加氢的硅衬底晶片的空隙产生的外延层缺陷通过以下方式制造外延晶片的方法被抑制：通过切克劳斯基法生长硅晶体，包括向硅熔体中加入氢和氮，并从硅熔体 氮浓度为3×1013cm-3至3×1014cm-3的硅晶体，通过加工硅晶体制备硅衬底，并在硅衬底的表面形成外延层。

公开(公告)号：US07828893B2

公开(公告)日：2010-11-09

申请号：US11386855

申请日：2006-03-22

申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

IPC分类号： C30B15/10

CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1×1013-8.1014原子/ cm3，氧浓度为5.2×1017〜7.5×1017原子/ cm3，a 中心厚度BMD密度为3·108-2·1010cm-3，线性滑移的累积长度为3cm，面积滑移区域的累积面积为7cm 2，前表面具有<45个氮诱导缺陷 DNN通道中的>0.13μmLSE，厚度至少为5μm的层，其中发生尺寸为≥0.09μm的nlE; 1×104 COPs / cm 3，厚度≥5μm的无BMD层。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。

公开(公告)号：US20100059861A1

公开(公告)日：2010-03-11

申请号：US12548862

申请日：2009-08-27

申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

IPC分类号： H01L29/30 ,  H01L21/18

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a PV region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmim of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和PV区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片的OSF密度小于10cm -2，本体的BMD密度为至少3.5×10 8 cm -3，BMD密度的波动范围BMDmax / BMDmim的径向分布不大于3 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

公开(公告)号：US20060213424A1

公开(公告)日：2006-09-28

申请号：US11386855

申请日：2006-03-22

申请人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

发明人： Timo Mueller ,  Wilfried von Ammon ,  Erich Daub ,  Peter Krottenthaler ,  Klaus Messmann ,  Friedrich Passek ,  Reinhold Wahlich ,  Arnold Kuehhorn ,  Johannes Studener

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B31/14 ,  C30B25/12 ,  C30B29/06 ,  C30B33/02 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having 0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.

摘要翻译： 不具有通过与硅晶片接合而产生的外延沉积层或层的硅晶片，氮浓度为1.10×13×10 4原子/ cm 3， / SUP>，氧浓度为5.2.10±17.5×10 17原子/ cm 3，中心厚度BMD密度为3.10 直线滑移的累积长度<= 3cm，面积滑移区域的累积面积<= 7 在DNN通道中，前表面具有≥0.33μmLSE的氮诱发缺陷，至少5μm厚的层，其中<= 1.10×4 大于>0.09μm的COPs / cm 3> 3，并且不含BMD的层>5μm厚。 这样的晶片可以通过热处理硅晶片，放置在基板保持器上，根据晶片掺杂使用的特定的基板保持器来制造。 对于每个保持器，选择最大加热速率以避免形成滑动。