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公开(公告)号：US06835973B2
公开(公告)日：2004-12-28
申请号：US10159573
申请日：2002-05-31
申请人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
发明人： Timothy H. Daubenspeck , William A. Klaasen , William T. Motsiff , Rosemary A. Previti-Kelly , Jed H. Rankin
IPC分类号： H01L2710
CPC分类号： H01L23/5254 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A fusible link for a semiconductor device comprises an insulating substrate and a conductive line pair on the surface of the insulating substrate, with the conductive line pair having spaced ends. A polymer is disposed over the insulating substrate and between the conductive line pair ends. The polymer is capable of being changed from a non-conductive to a conductive state upon exposure to an energy beam. Preferably, the polymer comprises a polyimide, more preferably, a polymer/onium salt mixture, most preferably, a polyaniline polymer doped with a triphenylsufonium salt. The link may further comprise a low &kgr; nanopore/nanofoam dielectric material adjacent the conductive line ends.
摘要翻译： 用于半导体器件的可熔连接件包括在绝缘衬底的表面上的绝缘衬底和导电线对，导电线对具有间隔开的端部。 聚合物设置在绝缘基板之上和导线对端之间。 聚合物能够在暴露于能量束时从非导电状态改变为导电状态。 优选地，聚合物包括聚酰亚胺，更优选聚合物/鎓盐混合物，最优选掺杂有三苯基鎓盐的聚苯胺聚合物。 该连接可以进一步包括邻近导线末端的低kappa纳米孔/纳米电流介电材料。
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公开(公告)号：US06827868B2
公开(公告)日：2004-12-07
申请号：US10065885
申请日：2002-11-27
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2224/05001 , H01L2224/05022 , H01L2224/05026 , H01L2224/05027 , H01L2224/05184 , H01L2224/05572 , H01L2224/056 , H01L2224/11 , H01L2924/0002 , H01L2924/00 , H01L2924/00014 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166
摘要： A method of forming a fuse structure in which passivating material over the fuse has a controlled, substantially uniform thickness that is provided after C4 metallurgy formation. A laser fuse deletion process for the fuse formed by this method is also disclosed.
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公开(公告)号：US06492207B2
公开(公告)日：2002-12-10
申请号：US09844125
申请日：2001-04-26
IPC分类号： H01L2177
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially- similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译： 公开了一种制造金属化熔丝线的结构和方法。 该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口 以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分基本上比第一和第二部分更具有阻力，第三部分的厚度基本上类似于 绝缘体结构的上层。 上层包括氮化物，下层包括氧化物，金属结构包括铜。 熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。 这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。 例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。 该技术实现了使用厚布线层的技术的高产率熔合。 该结构将熔丝段的厚度与布线的其余部分分开。 该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。
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公开(公告)号：US06261873B1
公开(公告)日：2001-07-17
申请号：US09303355
申请日：1999-04-29
IPC分类号： H01L2182
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2&mgr; wiring and very thin, e.g.,
摘要翻译： 公开了一种制造金属化熔丝线的结构和方法。 该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口 以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分比第一和第二部分具有更大的阻力，第三部分的厚度基本上类似于 上层绝缘体结构。 上层包括氮化物，下层包括氧化物，金属结构包括铜。 熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。 这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。 例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。 该技术实现了使用厚布线层的技术的高产率熔合。 该结构将熔丝段的厚度与布线的其余部分分开。 该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5mu的熔丝。
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公开(公告)号：US06498385B1
公开(公告)日：2002-12-24
申请号：US09388314
申请日：1999-09-01
申请人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
发明人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L2900
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76843 , H01L23/5258 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A structure and method of fabricating a semiconductor corrosion resistant metal fuse line including a refractory liner which can also act as a resistor is disclosed. Fabrication is accomplished using damascene process. The metal structure can be formed on a semiconductor substrate including a first portion including a first layer and a second layer, the first layer having higher resistivity than the second layer, the second layer having horizontal and vertical surfaces that are in contact with the first layer in the first portion, and a second portion coupled to the first portion, the second portion being comprised of the first layer, the first layer not being in contact with the horizontal and vertical surfaces of the second layer in the second portion. The metal structure can be used as a corrosion resistant fuse. The metal structure can also be used as a resistive element. The high voltage tolerant resistor structure allows for usage in mixed-voltage, and mixed signal and analog/digital applications. The resistor element has low capacitance, low skin effect, high linearity, a high melting temperature, and a high critical current to failure. The resistor structure can be formed on the walls of a dielectric trough. The structure can be applied to circuit applications such as an ESD network, an RC-coupled MOSFET, a resistor ballasted MOSFET and others. The resistors can be in series with the MOSFET or other structures.
摘要翻译： 公开了一种制造半导体耐腐蚀金属熔丝线的结构和方法，其包括也可以用作电阻器的耐火衬垫。 使用镶嵌工艺完成制作。 金属结构可以形成在包括包括第一层和第二层的第一部分的半导体衬底上，第一层具有比第二层更高的电阻率，第二层具有与第一层接触的水平和垂直表面 在第一部分中，以及第二部分，其联接到第一部分，第二部分由第一层组成，第一层不与第二部分中的第二层的水平和垂直表面接触。 金属结构可用作耐腐蚀保险丝。 金属结构也可以用作电阻元件。高耐压电阻器结构允许在混合电压，混合信号和模拟/数字应用中使用。 电阻元件具有低电容，低效果，高线性度，高熔点温度和高临界电流故障。 电阻器结构可以形成在电介质槽的壁上。 该结构可以应用于诸如ESD网络，RC耦合MOSFET，电阻器镇流MOSFET等电路应用。 电阻可以与MOSFET或其他结构串联。
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公开(公告)号：US06375159B2
公开(公告)日：2002-04-23
申请号：US09302915
申请日：1999-04-30
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A high laser absorption copper fuse can minimize the laser energy needed to delete the fuse portion of the conductor. Significantly, this type of fuse structure would allow for formation of copper fuses that can be deleted with appreciably less incident energy, mainly by increasing the absorption of the fuse link at the given incident laser energies. A metal wiring line contains a fuse link segment wherein the fuse link segment is composed of a stack of at least two metals. The underlayer material in the stack of metals is the primary electrical copper conductor, and the overlayer metal, also an electrical conductor, primarily tungsten or titanium-tungsten in composition, has predetermined thickness and optical properties chosen such that the combination of the overlayer metal with the underlayer metal provides for high absorption characteristics to incident infrared energy. Fabrication methods for providing overlaying material to the entire fuse link line, or to selective portions of the fuse link line are presented.
摘要翻译： 高激光吸收铜熔丝可以最大限度地减少删除导体熔丝部分所需的激光能量。 重要的是，这种类型的熔丝结构将允许形成铜熔丝，其主要通过增加在给定的入射激光能量下的熔丝链的吸收而以明显较少的入射能量被删除。一种金属布线包含熔丝链节段，其中 熔丝链段由至少两个金属的叠层组成。 金属叠层中的底层材料是主电铜导体，并且叠层金属，以及组成中的主导体钨或钛 - 钨的电导体具有预定的厚度和光学性质，使得覆盖金属与 底层金属为入射的红外能量提供了高吸收特性。提供了将覆盖材料提供给整个熔丝连接线或熔丝连接线的选择性部分的制造方法。
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公开(公告)号：US06746947B2
公开(公告)日：2004-06-08
申请号：US10254277
申请日：2002-09-25
申请人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
发明人： Timothy H. Daubenspeck , Daniel C. Edelstein , Robert M. Geffken , William T. Motsiff , Anthony K. Stamper , Steven H. Voldman
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/76807 , H01L21/76843 , H01L23/5258 , H01L28/20 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A structure and method of fabricating a semiconductor corrosion resistant metal fuse line including a refractory liner which can also act as a resistor is disclosed. Fabrication is accomplished using damascene process. The metal structure can be formed on a semiconductor substrate including a first portion including a first layer and a second layer, the first layer having higher resistivity than the second layer, the second layer having horizontal and vertical surfaces that are in contact with the first layer in the first portion, and a second portion coupled to the first portion, the second portion being comprised of the first layer, the first layer not being in contact with the horizontal and vertical surfaces of the second layer in the second portion. The metal structure can be used as a corrosion resistant fuse. The metal structure can also be used as a resistive element. The high voltage tolerant resistor structure allows for usage in mixed-voltage, and mixed signal and analog/digital applications. The resistor element has low capacitance, low skin effect, high linearity, a high melting temperature, and a high critical current to failure. The resistor structure can be formed on the walls of a dielectric trough. The structure can be applied to circuit applications such as an ESD network, an RC-coupled MOSFET, a resistor ballasted MOSFET and others. The resistors can be in series with the MOSFET or other structures.
摘要翻译： 公开了一种制造半导体耐腐蚀金属熔丝线的结构和方法，其包括也可以用作电阻器的耐火衬垫。 使用镶嵌工艺完成制作。 金属结构可以形成在包括包括第一层和第二层的第一部分的半导体衬底上，第一层具有比第二层更高的电阻率，第二层具有与第一层接触的水平和垂直表面 在第一部分中，以及第二部分，其联接到第一部分，第二部分由第一层组成，第一层不与第二部分中的第二层的水平和垂直表面接触。 金属结构可用作耐腐蚀保险丝。 金属结构也可以用作电阻元件。 高耐压电阻器结构允许在混合电压，混合信号和模拟/数字应用中使用。 电阻元件具有低电容，低效果，高线性度，高熔点温度和高临界电流故障。 电阻器结构可以形成在电介质槽的壁上。 该结构可以应用于诸如ESD网络，RC耦合MOSFET，电阻器镇流MOSFET等电路应用。 电阻可以与MOSFET或其他结构串联。
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公开(公告)号：US06455914B2
公开(公告)日：2002-09-24
申请号：US09842545
申请日：2001-04-26
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating a metallization fuse line is disclosed. The structure can be formed on a semiconductor substrate, including an insulator structure formed on the substrate, the insulator structure having an upper layer and a lower layer, the upper being thinner than the lower, the insulator structure having a plurality of openings of varying depth, and a metal structure inlaid in the insulator structure, the metal structure having first and second portions and a third portion there between that is substantially more resistive than the first and second portions, the third portion having a thickness substantially similar to the thickness of the upper layer of the insulator structure. The upper layer includes a nitride, the lower layer includes an oxide and the metal structure includes copper. The fuse structure allows formation of “easy to laser delete” thin metal fuses within segments of thick metal lines. This applies to wiring layers formed from “high” melting temperature metals and those defined using a damascene process. For example, copper back end of line (Cu BEOL) damascene wiring, as used with CMOS can use the invention. The technique achieves high yield fusing for technologies that use thick wiring layers. The structure separates the thickness of the fuse segment from the remainder of the wiring line. The structure can be used with very thick, e.g., >1.2 &mgr; wiring and very thin, e.g.,
摘要翻译： 公开了一种制造金属化熔丝线的结构和方法。 该结构可以形成在半导体衬底上，包括形成在衬底上的绝缘体结构，绝缘体结构具有上层和下层，上部比下部更薄，绝缘体结构具有多个不同深度的开口 以及镶嵌在绝缘体结构中的金属结构，具有第一和第二部分的金属结构和在其之间的第三部分比第一和第二部分具有更大的阻力，第三部分的厚度基本上类似于 上层绝缘体结构。 上层包括氮化物，下层包括氧化物，金属结构包括铜。 熔丝结构允许在厚金属线段内形成“易于激光删除”的薄金属保险丝。 这适用于由“高”熔融金属形成的布线层和使用镶嵌工艺定义的布线层。 例如，与CMOS一起使用的铜后端（Cu BEOL）镶嵌布线可以使用本发明。 该技术实现了使用厚布线层的技术的高产率熔合。 该结构将熔丝段的厚度与布线的其余部分分开。 该结构可以使用非常厚的例如>1.2μm的布线和非常薄的例如<0.5μ的保险丝。
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公开(公告)号：US06991971B2
公开(公告)日：2006-01-31
申请号：US10675177
申请日：2003-09-30
IPC分类号： H01L21/82
CPC分类号： H01L23/53295 , H01L23/5256 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a fuse for a semiconductor device. The method including: providing a substrate; forming a first dielectric layer on a top surface of said substrate; forming a dielectric mandrel on a top surface of said first dielectric layer; forming a second dielectric layer on top of said mandrel and a top surface of said first dielectric layer forming contact openings down to said substrate in said first and second dielectric layers on opposite sides of said mandrel, said contacts spaced away from said mandrel and leaving portions of said second dielectric layer between said mandrel and said contacts; removing said second dielectric layer from over said mandrel between said contact openings to form a trough; and filling said trough and contact openings with a conductor.
摘要翻译： 一种制造用于半导体器件的熔丝的方法。 该方法包括：提供衬底; 在所述衬底的顶表面上形成第一电介质层; 在所述第一介电层的顶表面上形成介电心轴; 在所述心轴的顶部上形成第二电介质层，并且所述第一电介质层的顶表面在所述心轴的相对侧上的所述第一和第二介电层中向下形成接触开口，所述触头与所述心轴间隔开并留下部分 所述第二电介质层位于所述心轴和所述触头之间; 从所述心轴上的所述接触开口之间移除所述第二电介质层以形成槽; 并用导体填充所述槽和接触开口。
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公开(公告)号：US06946379B2
公开(公告)日：2005-09-20
申请号：US10860470
申请日：2004-06-03
IPC分类号： H01L23/525 , H01L23/544 , H01L21/44
CPC分类号： H01L23/544 , H01L23/5258 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.
摘要翻译： 一种具有形成在其中的至少一个熔丝和对准标记的半导体器件。 在熔断器和对准标记的表面上的抗蚀刻层，其提供与激光熔丝删除工艺结合使用的均匀的钝化厚度。
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