公开(公告)号：US20250087521A1

公开(公告)日：2025-03-13

申请号：US18367306

申请日：2023-09-12

Applicant: Tokyo Electron Limited

Inventor： Christopher NETZBAND ,  Adam GILDEA

IPC: H01L21/683 ,  H01L21/67

Abstract: Expandable semiconductor chucks are disclosed. The semiconductor chucks can include a first portion comprising a plurality of first couplers configured to receive a corresponding plurality of actuators. The semiconductor chucks can include a second portion circumscribed about the first portion, the second portion comprising a plurality of segments. Each segment can include a wafer holder to selectively couple the respective segment to a semiconductor wafer. Each segment can include a second coupler to receive one or more of the plurality of actuators. The actuators can extend to increase a dimension between the first portion and the second portion and retract to decrease a dimension between the first portion and the second portion.

公开(公告)号：US20250112083A1

公开(公告)日：2025-04-03

申请号：US18376359

申请日：2023-10-03

Applicant: Tokyo Electron Limited

Inventor： Christopher NETZBAND ,  Adam GILDEA

IPC: H01L21/687 ,  H01L21/18 ,  H01L21/67 ,  H01L21/683

Abstract: Conformal semiconductor chucks are disclosed. The semiconductor chucks can include a first portion comprising a first vacuum pad. The semiconductor chucks can include a second portion exhibiting greater compliance than either of the first portion or a third portion. The semiconductor chucks can include the third portion comprising a second vacuum pad.

公开(公告)号：US20240234363A1

公开(公告)日：2024-07-11

申请号：US18320791

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Scott LEFEVRE ,  Adam GILDEA ,  Satohiko HOSHINO ,  Sophia MADELONE ,  Yuji MIMURA

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method includes providing a first substrate with a first surface including an alkyne moiety. The method includes providing a second substrate with a second surface including an azide moiety. The method further includes bonding the first substrate to the second substrate. The bonding of the first substrate to the second substrate includes making physical contact between the first surface and the second surface at an interface and chemically reacting the alkyne moiety with the azide moiety through a cycloaddition mechanism, thereby forming a triazole moiety-linked layer at the interface.

公开(公告)号：US20250096190A1

公开(公告)日：2025-03-20

申请号：US18370840

申请日：2023-09-20

Applicant: Tokyo Electron Limited

Inventor： Adam GILDEA ,  Satohiko HOSHINO

IPC: H01L23/00

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The methods include forming a first layer on a first substrate, treating the first layer with a nitrogen-based plasma to form a first type of dangling bonds, treating the first layer with an oxygen-based plasma to transform the first type of dangling bonds into a second type of dangling bonds, and treating the first layer with water to transform the second type of dangling bonds into a third type of dangling bonds.

公开(公告)号：US20240363564A1

公开(公告)日：2024-10-31

申请号：US18309678

申请日：2023-04-28

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  Matthew BARON ,  Adam GILDEA

IPC: H01L23/00 ,  H01L25/065 ,  H10B80/00

CPC classification number: H01L24/06 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H10B80/00 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06505 ,  H01L2224/08146 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/1431 ,  H01L2924/1434

Abstract: At least one aspect of the present disclosure is directed to a semiconductor device. The semiconductor device includes a first substrate including a first area and a second area; a second substrate including a third area and a fourth area; a first bonding layer comprising a first dielectric material that bonds the first area to the third area; and a second bonding layer comprising a second dielectric material that bonds the second area to the fourth area. The first dielectric material is different from the second dielectric material.

公开(公告)号：US20240170444A1

公开(公告)日：2024-05-23

申请号：US18320781

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Scott LEFEVRE ,  Adam GILDEA ,  Satohiko HOSHINO ,  Sophia MADELONE ,  Yuji MIMURA

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/8022 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method includes providing a first bonding surface on a first substrate, the first bonding surface including a bonding layer that is thermally curable or photocurable. The method includes providing a second bonding surface on a second substrate. The method includes bonding the first substrate to the second substrate by making physical contact between the first bonding surface and second bonding surface. The method further includes applying thermal energy or light to the bonding layer.