公开(公告)号：US20240191349A1

公开(公告)日：2024-06-13

申请号：US18522825

申请日：2023-11-29

Applicant: Tokyo Electron Limited

Inventor： Taichi MONDEN ,  Atsushi TANAKA

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4405 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52

Abstract: A precoat method for a substrate processing apparatus for depositing on a substrate using a raw material gas and a reducing gas is provided. The method includes: a) supplying a fluorine-containing gas into a processing chamber to clean an inside of the processing chamber; b) after a), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber; c) after b), supplying a raw material gas and a reducing gas into the processing chamber to form a precoat film; and d) after c), supplying a reducing gas into the processing chamber to purge the inside of the processing chamber before depositing on a subsequent substrate.

公开(公告)号：US20190229009A1

公开(公告)日：2019-07-25

申请号：US16370030

申请日：2019-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi TANAKA ,  Ryohei OGAWA

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/3065

Abstract: A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a wafer on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a predetermined temperature therethrough; a support table configured to support the stage; and a temperature adjusting plate installed between the stage and the support table, and including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table.

公开(公告)号：US20170352576A1

公开(公告)日：2017-12-07

申请号：US15521217

申请日：2015-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi TANAKA ,  Ryohei OGAWA

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/68785 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103

Abstract: A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a water on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a predetermined temperature therethrough; a support table configured to support the stage; and a temperature adjusting plate installed between the stage and the support table, and including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table.

公开(公告)号：US20240321602A1

公开(公告)日：2024-09-26

申请号：US18733073

申请日：2024-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji ASAKAWA ,  Atsushi TANAKA ,  Hiroyuki OGAWA

IPC: H01L21/67

CPC classification number: H01L21/67063

Abstract: A cylindrical inner wall used in a substrate processing apparatus and surrounding a stage on which a substrate is placed, with a gap between the inner wall and an outer periphery of the stage. The inner wall includes a plurality of slits formed in a lower end of the inner wall, and a plurality of grooves formed in the inner surface of the inner wall to extend from an upper end to the lower end of the inner wall so as to communicate with the slits.

公开(公告)号：US20200344850A1

公开(公告)日：2020-10-29

申请号：US16856626

申请日：2020-04-23

Applicant: Tokyo Electron Limited

Inventor： Hirofumi YAMAGUCHI ,  Yoshiaki SASAKI ,  Yuichi NISHIMORI ,  Atsushi TANAKA

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes: a chamber having a container including at least one substrate-heating region and at least one substrate-cooling region; a heating mechanism configured to heat a first substrate in the at least one substrate-heating region; a cooling mechanism configured to cool a second substrate in the at least one substrate-cooling region while the first substrate is being heated; and a partition provided in the container and configured to separate the at least one substrate-heating region and the at least one substrate-cooling region from each other in terms of heat and pressure.