公开(公告)号：US20240288768A1

公开(公告)日：2024-08-29

申请号：US18563382

申请日：2022-05-19

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU

IPC: G03F7/028 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/028 ,  G03F7/038 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2026 ,  H01L21/0275 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: Disclosed is a photoresist composition comprising a non-chemically amplified resist material and a sensitizer precursor, wherein the sensitizer precursor is a compound that, upon irradiation with ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less, generates a sensitizer that absorbs non-ionizing radiation having a wavelength more than 300 nm.

公开(公告)号：US20240126175A1

公开(公告)日：2024-04-18

申请号：US18470491

申请日：2023-09-20

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU ,  Kayoko CHO

IPC: G03F7/40

CPC classification number: G03F7/40 ,  G03F7/11

Abstract: Disclosed is a method for forming a resist pattern including, in the following order, irradiating a part of a resist film containing a resist material with a first radiation, baking the resist film, irradiating the entire region including the part irradiated with the first radiation and other parts in the resist film with a second radiation in a batch, and forming a resist pattern by development for removing a part of the resist film.