公开(公告)号：US20180164696A1

公开(公告)日：2018-06-14

申请号：US15828906

申请日：2017-12-01

Applicant: Tokyo Electron Limited

Inventor： Teruhiko MORIYA ,  Masaru TOMONO ,  Ryo SHIMADA ,  Makoto HAYAKAWA ,  Seiji NAGAHARA

IPC: G03F7/20

Abstract: An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. Light emitted from the light irradiation unit is deviated by a light-path changing unit from a relative movement area of a substrate. When a substrate is relatively moved below the light irradiation unit without the intension of being subjected to a light irradiation process, a control unit outputs a control signal such that an irradiation area is not formed on a surface of the substrate by the light-path changing unit, while the light source unit emitting light.

公开(公告)号：US20160327869A1

公开(公告)日：2016-11-10

申请号：US15109917

申请日：2015-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Yuichi TERASHITA ,  Hironori MIZOGUCHI

IPC: G03F7/20

CPC classification number: G03F7/7055 ,  G03F7/2022 ,  G03F7/70558

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract translation: 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。

公开(公告)号：US20230082557A1

公开(公告)日：2023-03-16

申请号：US17791834

申请日：2021-01-15

Applicant: LINTFIELD LIMITED ,  TOKYO ELECTRON LIMITED

Inventor： Christopher WALL ,  Cong-Que DINH ,  Seiji NAGAHARA

IPC: G03F7/039 ,  C07D335/16 ,  C07D495/10 ,  C07D519/00 ,  G03F7/038

Abstract: Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structured.

公开(公告)号：US20170052450A1

公开(公告)日：2017-02-23

申请号：US15241315

申请日：2016-08-19

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Hisashi NAKAGAWA ,  Takehiko NARUOKA ,  Tomoki NAGAI ,  Seiichi TAGAWA ,  Akihiro OSHIMA ,  Seiji NAGAHARA

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/16 ,  G03F7/38

CPC classification number: G03F7/2022 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/2032 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38

Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Abstract translation: 图案形成方法包括在形成在基板上的抗反射膜上施加化学放大的抗蚀剂材料以形成抗蚀剂材料膜。 抗蚀剂材料膜图案地暴露于波长不大于400nm的电离辐射或非离子化辐射。 图案曝光的抗蚀剂材料膜被洪泛地暴露于波长大于用于图案曝光的非离子化辐射的波长的大于200nm的非离子化辐射。 烘烤曝光的抗蚀剂材料膜。 用显影剂溶液显影烘烤的抗蚀剂材料膜。 用于液体曝光的非离子辐射防反射膜的消光系数不小于0.1。 化学放大抗蚀剂材料包括能够在曝光时产生辐射敏感敏化剂和酸的基础成分和生成成分。

公开(公告)号：US20150241793A1

公开(公告)日：2015-08-27

申请号：US14628682

申请日：2015-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michael A. CARCASI ,  Mark H. SOMERVELL ,  Joshua S. HOOGE ,  Benjamen M. RATHSACK ,  Seiji NAGAHARA

IPC: G03F7/20

CPC classification number: G03F7/70608 ,  G03F7/2022 ,  G03F7/70633 ,  G03F7/70675

Abstract: Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

Abstract translation: 描述了光敏化学增幅抗蚀剂（PS-CAR）图案化方法中测量光敏剂浓度的方法。 测量的光敏剂浓度可用于图案化过程的反馈和前馈控制以及随后的处理步骤。 还描述了使用PS-CAR抗蚀剂形成的计量目标，以及包括多个这样的计量目标以便于图案化过程控制的基板。

公开(公告)号：US20240288768A1

公开(公告)日：2024-08-29

申请号：US18563382

申请日：2022-05-19

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU

IPC: G03F7/028 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: G03F7/028 ,  G03F7/038 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2026 ,  H01L21/0275 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: Disclosed is a photoresist composition comprising a non-chemically amplified resist material and a sensitizer precursor, wherein the sensitizer precursor is a compound that, upon irradiation with ionizing radiation or non-ionizing radiation having a wavelength of 300 nm or less, generates a sensitizer that absorbs non-ionizing radiation having a wavelength more than 300 nm.

公开(公告)号：US20240126175A1

公开(公告)日：2024-04-18

申请号：US18470491

申请日：2023-09-20

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Congque DINH ,  Makoto MURAMATSU ,  Kayoko CHO

IPC: G03F7/40

CPC classification number: G03F7/40 ,  G03F7/11

Abstract: Disclosed is a method for forming a resist pattern including, in the following order, irradiating a part of a resist film containing a resist material with a first radiation, baking the resist film, irradiating the entire region including the part irradiated with the first radiation and other parts in the resist film with a second radiation in a batch, and forming a resist pattern by development for removing a part of the resist film.

公开(公告)号：US20200057371A1

公开(公告)日：2020-02-20

申请号：US16545868

申请日：2019-08-20

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA

IPC: G03F7/20 ,  G03F7/00 ,  G03F7/004

Abstract: A method of simulating a resist pattern according to an exemplary embodiment includes a step (A) of calculating a latent image of a concentration of an active species in a resist film that has been radiated by a radioactive ray along a target pattern with respect to a radiation position of the radioactive ray, a step (B) of calculating a change rate of the concentration with respect to the radiation position at an edge of the target pattern on the basis of the latent image, a step (C) of calculating a probabilistic variation at the edge of the target pattern, and a step (D) of calculating a variation in pattern edge roughness from the change rate of the concentration and the probabilistic variation.

公开(公告)号：US20180143540A1

公开(公告)日：2018-05-24

申请号：US15815925

申请日：2017-11-17

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Masaru TOMONO ,  Nobutaka FUKUNAGA ,  Gousuke SHIRAISHI ,  Yukie MINEKAWA

IPC: G03F7/20 ,  H01L21/67 ,  H01L21/677

CPC classification number: G03F7/70725 ,  G03F7/2022 ,  G03F7/70558 ,  G03F7/70775 ,  H01L21/67178 ,  H01L21/67225 ,  H01L21/67718

Abstract: An exposure apparatus includes: a stage on which a substrate is placed; a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate; a rotation mechanism configured to rotate the substrate placed on the stage relative to the irradiation area; a stage moving mechanism configured to move the stage relative to the irradiation area in a back and forth direction; and a control unit configured to output control signals that make said exposure apparatus perform a first step that rotates the substrate relative to the irradiation area having a first illuminance distribution such that the whole surface of the substrate is exposed, and a second step that moves the substrate in the back and forth direction relative to the irradiation area having a second illuminance distribution while rotation of the substrate is being stopped, such that the whole surface of the substrate is exposed.

公开(公告)号：US20180136567A1

公开(公告)日：2018-05-17

申请号：US15813464

申请日：2017-11-15

Applicant: Tokyo Electron Limited

Inventor： Teruhiko MORIYA ,  Masaru TOMONO ,  Ryo SHIMADA ,  Makoto HAYAKAWA ,  Seiji NAGAHARA

IPC: G03F7/20

Abstract: An exposure apparatus includes a stage on which a substrate is placed, a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate, a stage moving mechanism configured to move the stage in a back and forth direction relative to the irradiation area, such that the whole surface of the substrate is exposed, and a light receiving unit configured move in the irradiation area between one end and the other end of the irradiation area in order to detect an illuminance distribution of the irradiation area in a longitudinal direction of the irradiation area.