公开(公告)号：US20150243489A1

公开(公告)日：2015-08-27

申请号：US14623765

申请日：2015-02-17

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Uda ,  Hiroshi Tsujimoto ,  Akitoshi Harada ,  Hideaki Yakushiji ,  Masaharu Sugiyama

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01L21/31116 ,  H01L21/31144

Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract translation: 可以简单有效地除去留在等离子体处理装置的室中的含Ti。 在Low-k膜蚀刻工艺中，在干法蚀刻工艺（工艺S2）完成之后，在晶片保持在静电卡盘40上的情况下，在晶片存在下进行干法处理（工艺S3）。 进行干燥处理（工序S3），以主要除去残留在室10中的含Ti反应物。为此，将含有H 2气体和N 2气体的清洗气体从处理气体供给 单元70以预设的流量比率。 然后，用于等离子体产生的第一高频功率HF以预设的功率电平施加到基座12，使得通过清洁气体的高频放电在腔室10内产生等离子体。

公开(公告)号：US09984907B2

公开(公告)日：2018-05-29

申请号：US14977778

申请日：2015-12-22

Applicant: Tokyo Electron Limited

Inventor： Hirofumi Haga ,  Nobutaka Nakao ,  Hideaki Yakushiji

IPC: H01L21/67 ,  H01J37/32 ,  A61L2/24 ,  A61L2/14

CPC classification number: H01L21/67069 ,  A61L2/14 ,  A61L2/24 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/0379 ,  Y10T137/86002 ,  Y10T137/86027 ,  Y10T137/86083

Abstract: An evacuation method used for a vacuum processing apparatus including a vacuum processing chamber is provided. The vacuum processing chamber is evacuated by an exhaust device for a first predetermined period of time by opening a valve connecting the exhaust device with the vacuum processing chamber. A pressure in the vacuum processing chamber is urged to increase by closing the valve and leaving the valve closed for a second predetermined period of time after evacuating the vacuum processing chamber. Evacuating the vacuum processing chamber and urging the pressure in the vacuum processing chamber to increase are performed so as to reduce the pressure in the vacuum processing chamber to a pressure between 6.7 Pa and 13.3×102 Pa (between 5 Torr and 10 Torr) without freezing moisture in the vacuum processing chamber.

公开(公告)号：US20220389584A1

公开(公告)日：2022-12-08

申请号：US17830877

申请日：2022-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryutaro SUDA ,  Maju Tomura ,  Susumu Nogami ,  Hideaki Yakushiji ,  Takahiro Murakami ,  Yusuke Wako

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.

公开(公告)号：US10192719B2

公开(公告)日：2019-01-29

申请号：US14962407

申请日：2015-12-08

Applicant: Tokyo Electron Limited

Inventor： Takamitsu Takayama ,  Akitoshi Harada ,  Hideaki Yakushiji

IPC: H01J37/32 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.