公开(公告)号：US09202706B2

公开(公告)日：2015-12-01

申请号：US13960012

申请日：2013-08-06

Applicant: Tokyo Electron Limited

Inventor： Takahisa Iwasaki ,  Hideyuki Hatoh ,  Yoshisato Oikawa

IPC: H01L27/146 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/3266 ,  H01L21/02057 ,  H01L27/1463 ,  H01L27/14685

Abstract: A method of forming a pattern on a silicon layer of a substrate, to be processed, wherein a semiconductor device is formed at a front surface side of the substrate that is supported by a support substrate at the front surface side, includes an etching step of etching the substrate by plasma via a mask having a predetermined pattern formed at a back surface side of the silicon layer of the substrate; and a cleaning step of cleaning the substrate by plasma using cleaning gas obtained by mixing CF series gas and inert-gas, after the etching step.

Abstract translation: 一种在被处理基板的硅层上形成图案的方法，其中半导体器件形成在由表面侧的支撑基板支撑的基板的正面侧，包括蚀刻步骤 通过在衬底的硅层的背面侧形成的具有预定图案的掩模，通过等离子体蚀刻衬底; 以及在蚀刻步骤之后使用通过混合CF系列气体和惰性气体获得的清洁气体等离子体来清洁基板的清洁步骤。

公开(公告)号：US20140042583A1

公开(公告)日：2014-02-13

申请号：US13960012

申请日：2013-08-06

Applicant: Tokyo Electron Limited

Inventor： Takahisa IWASAKI ,  Hideyuki Hatoh ,  Yoshisato Oikawa

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/3266 ,  H01L21/02057 ,  H01L27/1463 ,  H01L27/14685

Abstract: A method of forming a pattern on a silicon layer of a substrate, to be processed, wherein a semiconductor device is formed at a front surface side of the substrate that is supported by a support substrate at the front surface side, includes an etching step of etching the substrate by plasma via a mask having a predetermined pattern formed at a back surface side of the silicon layer of the substrate; and a cleaning step of cleaning the substrate by plasma using cleaning gas obtained by mixing CF series gas and inert-gas, after the etching step.

Abstract translation: 一种在被处理基板的硅层上形成图案的方法，其中半导体器件形成在由表面侧的支撑基板支撑的基板的正面侧，包括蚀刻步骤 通过在衬底的硅层的背面侧形成的具有预定图案的掩模，通过等离子体蚀刻衬底; 以及在蚀刻步骤之后使用通过混合CF系列气体和惰性气体获得的清洁气体等离子体来清洁基板的清洁步骤。

公开(公告)号：US09460895B2

公开(公告)日：2016-10-04

申请号：US14377898

申请日：2013-03-08

Applicant: Tokyo Electron Limited

Inventor： Hideyuki Hatoh ,  Hiroyuki Ogawa

IPC: H01L21/302 ,  H01L21/461 ,  G01R31/00 ,  G01L21/30 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  B44C1/22 ,  H01J37/32 ,  H01L29/84 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01J37/3244 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898 ,  H01L22/26 ,  H01L29/84 ,  Y10T137/87684

Abstract: A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.

Abstract translation: 气体供给方法包括使用第一和第二阀控制第一和第二气体管道与扩散室之间的连通; 使用连接在第一和第二阀上游的第三和第四阀来控制第一和第二气体管道内的气体排放; 以及使用第五阀控制排气管和扩散室之间的连通。 气体供给方法还包括在开始第一步骤之前关闭第一阀和第三阀并对第一气体管内的第一气体加压的第一加压步骤; 第二加压步骤，在开始第二步骤之前关闭第二阀和第四阀并对第二气体管内的第二气体加压; 以及在开始第一步骤和第二步骤时打开第五阀的排气步骤，并且在扩散室内排放气体。

公开(公告)号：US20140361102A1

公开(公告)日：2014-12-11

申请号：US14377898

申请日：2013-03-08

Applicant: Tokyo Electron Limited

Inventor： Hideyuki Hatoh ,  Hiroyuki Ogawa

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898 ,  H01L22/26 ,  H01L29/84 ,  Y10T137/87684

Abstract: A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.

Abstract translation: 气体供给方法包括使用第一和第二阀控制第一和第二气体管道与扩散室之间的连通; 使用连接在第一和第二阀上游的第三和第四阀来控制第一和第二气体管道内的气体排放; 以及使用第五阀控制排气管和扩散室之间的连通。 气体供给方法还包括在开始第一步骤之前关闭第一阀和第三阀并对第一气体管内的第一气体加压的第一加压步骤; 第二加压步骤，在开始第二步骤之前关闭第二阀和第四阀并对第二气体管内的第二气体加压; 以及在开始第一步骤和第二步骤时打开第五阀的排气步骤，并且在扩散室内排放气体。

公开(公告)号：US20140311676A1

公开(公告)日：2014-10-23

申请号：US14370279

申请日：2013-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideyuki Hatoh ,  Shigeki Doba ,  Shinya Yamamoto ,  Satoshi YAMADA ,  Hiroto Mori ,  Kenji Ando

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/6835 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: A substrate mounting table (94) is equipped with a mounting table (2), an electrostatic chuck (6), and a bevel covering (5). The electrostatic chuck (6) has a supporting surface (6e) which is in contact with the whole of the rear surface of a wafer (W). The annular bevel covering (5) has an outer diameter (DA) which is greater than that of the supporting surface (6e), and an inner diameter (DI) which is smaller than that of the wafer (W). The bevel covering (5) is disposed such that, when viewed from the direction orthogonal to the supporting surface (6e), the bevel covering (5) surrounds the periphery of the wafer (W) supported on the supporting surface (6e).

Abstract translation: 基板安装台（94）配备有安装台（2），静电卡盘（6）和斜面盖（5）。 静电卡盘（6）具有与晶片（W）的整个背面接触的支撑面（6e）。 环形斜面罩（5）的外径（DA）大于支撑面（6e）的外径（DA），内径（DI）小于晶片（W）的直径。 斜面覆盖物（5）设置成使得当从与支撑表面（6e）正交的方向观察时，斜面覆盖物（5）围绕支撑在支撑表面（6e）上的晶片（W）的周边。