公开(公告)号：US10985029B2

公开(公告)日：2021-04-20

申请号：US16710791

申请日：2019-12-11

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Ogawa ,  Tomoya Okubo ,  Akitaka Shimizu

IPC: H01L21/31 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

公开(公告)号：US11328904B2

公开(公告)日：2022-05-10

申请号：US16905003

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shigeki Doba ,  Hiroyuki Ogawa ,  Hajime Naito ,  Akitaka Shimizu ,  Tatsuo Matsudo

IPC: H01J21/20 ,  H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US12040198B2

公开(公告)日：2024-07-16

申请号：US16641456

申请日：2018-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji Asakawa ,  Atsushi Tanaka ,  Hiroyuki Ogawa

IPC: H01L21/67

CPC classification number: H01L21/67063

Abstract: A cylindrical inner wall used in a substrate processing apparatus and surrounding a stage on which a substrate is placed, with a gap between the inner wall and an outer periphery of the stage. The inner wall includes a plurality of slits formed in a lower end of the inner wall, and a plurality of grooves formed in the inner surface of the inner wall to extend from an upper end to the lower end of the inner wall so as to communicate with the slits.

公开(公告)号：US10734201B2

公开(公告)日：2020-08-04

申请号：US15449675

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki Doba ,  Hiroyuki Ogawa ,  Hajime Naito ,  Akitaka Shimizu ,  Tatsuo Matsudo

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US10541145B2

公开(公告)日：2020-01-21

申请号：US15940528

申请日：2018-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Ogawa ,  Tomoya Okubo ,  Akitaka Shimizu

IPC: H01L21/31 ,  H01L21/311 ,  H01J37/32

Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

公开(公告)号：US09460895B2

公开(公告)日：2016-10-04

申请号：US14377898

申请日：2013-03-08

Applicant: Tokyo Electron Limited

Inventor： Hideyuki Hatoh ,  Hiroyuki Ogawa

IPC: H01L21/302 ,  H01L21/461 ,  G01R31/00 ,  G01L21/30 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  B44C1/22 ,  H01J37/32 ,  H01L29/84 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01J37/3244 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898 ,  H01L22/26 ,  H01L29/84 ,  Y10T137/87684

Abstract: A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.

Abstract translation: 气体供给方法包括使用第一和第二阀控制第一和第二气体管道与扩散室之间的连通; 使用连接在第一和第二阀上游的第三和第四阀来控制第一和第二气体管道内的气体排放; 以及使用第五阀控制排气管和扩散室之间的连通。 气体供给方法还包括在开始第一步骤之前关闭第一阀和第三阀并对第一气体管内的第一气体加压的第一加压步骤; 第二加压步骤，在开始第二步骤之前关闭第二阀和第四阀并对第二气体管内的第二气体加压; 以及在开始第一步骤和第二步骤时打开第五阀的排气步骤，并且在扩散室内排放气体。

公开(公告)号：US20140361102A1

公开(公告)日：2014-12-11

申请号：US14377898

申请日：2013-03-08

Applicant: Tokyo Electron Limited

Inventor： Hideyuki Hatoh ,  Hiroyuki Ogawa

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898 ,  H01L22/26 ,  H01L29/84 ,  Y10T137/87684

Abstract: A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.

Abstract translation: 气体供给方法包括使用第一和第二阀控制第一和第二气体管道与扩散室之间的连通; 使用连接在第一和第二阀上游的第三和第四阀来控制第一和第二气体管道内的气体排放; 以及使用第五阀控制排气管和扩散室之间的连通。 气体供给方法还包括在开始第一步骤之前关闭第一阀和第三阀并对第一气体管内的第一气体加压的第一加压步骤; 第二加压步骤，在开始第二步骤之前关闭第二阀和第四阀并对第二气体管内的第二气体加压; 以及在开始第一步骤和第二步骤时打开第五阀的排气步骤，并且在扩散室内排放气体。