公开(公告)号：US20140311676A1

公开(公告)日：2014-10-23

申请号：US14370279

申请日：2013-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideyuki Hatoh ,  Shigeki Doba ,  Shinya Yamamoto ,  Satoshi YAMADA ,  Hiroto Mori ,  Kenji Ando

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/6835 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: A substrate mounting table (94) is equipped with a mounting table (2), an electrostatic chuck (6), and a bevel covering (5). The electrostatic chuck (6) has a supporting surface (6e) which is in contact with the whole of the rear surface of a wafer (W). The annular bevel covering (5) has an outer diameter (DA) which is greater than that of the supporting surface (6e), and an inner diameter (DI) which is smaller than that of the wafer (W). The bevel covering (5) is disposed such that, when viewed from the direction orthogonal to the supporting surface (6e), the bevel covering (5) surrounds the periphery of the wafer (W) supported on the supporting surface (6e).

Abstract translation: 基板安装台（94）配备有安装台（2），静电卡盘（6）和斜面盖（5）。 静电卡盘（6）具有与晶片（W）的整个背面接触的支撑面（6e）。 环形斜面罩（5）的外径（DA）大于支撑面（6e）的外径（DA），内径（DI）小于晶片（W）的直径。 斜面覆盖物（5）设置成使得当从与支撑表面（6e）正交的方向观察时，斜面覆盖物（5）围绕支撑在支撑表面（6e）上的晶片（W）的周边。

公开(公告)号：US20210057228A1

公开(公告)日：2021-02-25

申请号：US16991938

申请日：2020-08-12

Applicant: Tokyo Electron Limited

Inventor： Satoshi YAMADA ,  Koki CHINO ,  Yoshimitsu KON

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

Abstract: In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

公开(公告)号：US20170133234A1

公开(公告)日：2017-05-11

申请号：US15404471

申请日：2017-01-12

Applicant: Tokyo Electron Limited

Inventor： Shigeki DOBA ,  Satoshi YAMADA

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/768 ,  H01L21/311 ,  H01L21/687

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31138 ,  H01L21/68735 ,  H01L21/76898

Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.

公开(公告)号：US20140291286A1

公开(公告)日：2014-10-02

申请号：US14224109

申请日：2014-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuyuki OKAYAMA ,  Koichi KAZAMA ,  Shuichiro UDA ,  Satoshi YAMADA ,  Shinji FUCHIGAMI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/45574

Abstract: A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.

Abstract translation: 喷头包括气体注入板和气体供应单元。 气体供给单元具有设置在沿轴线的区域中的第一气体供给路径和设置在设置有第一气体供给路径的区域周围的区域中的第二气体供给路径。 第一气体供给路径具有连接到气体供给单元的第一气体管线，第二气体管线，第二气体扩散空间，第三气体管线和第三气体扩散空间的第一气体扩散空间。 第二气体供给路径具有连接到气体供给单元的第四气体管线，第五气体管线，第五气体扩散空间，第六气体管线和第六气体扩散空间的第四气体扩散空间，其依次连接。

公开(公告)号：US20210082712A1

公开(公告)日：2021-03-18

申请号：US17010983

申请日：2020-09-03

Applicant: Tokyo Electron Limited

Inventor： Koki CHINO ,  Satoshi YAMADA ,  Yoshimitsu KON

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: A disclosed method etches a silicon oxide film of a substrate on which a mask is provided. The method includes performing first plasma processing on a substrate by using a first plasma formed from a first processing gas including a fluorocarbon gas, a fluorine-free carbon-containing gas, and an oxygen-containing gas. The method further includes performing second plasma processing on the substrate by using a second plasma formed from a second processing gas including a fluorocarbon gas. A temperature of the substrate during the first plasma processing is lower than the temperature of the substrate during the second plasma processing.