公开(公告)号：US20240209507A1

公开(公告)日：2024-06-27

申请号：US18536789

申请日：2023-12-12

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA ,  Takuya OIKAWA ,  Noriaki FUKIAGE ,  Hiroyuki WADA

IPC: C23C16/458 ,  C23C16/46 ,  H01J37/32

CPC classification number: C23C16/4584 ,  C23C16/46 ,  H01J37/32724 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: A film forming apparatus includes a processing chamber and a substrate support provided in the processing chamber. The substrate support includes a recess in which a substrate is placed. The recess includes a projection at a bottom surface thereof. The projection is provided along an outer periphery of the substrate placed in the recess.

公开(公告)号：US20200299835A1

公开(公告)日：2020-09-24

申请号：US16815181

申请日：2020-03-11

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA

IPC: C23C16/44 ,  C23C16/34

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

公开(公告)号：US20240297061A1

公开(公告)日：2024-09-05

申请号：US18589816

申请日：2024-02-28

Applicant: Tokyo Electron Limited

Inventor： Ryoya TOMINAGA ,  Akashi FUJIO ,  Masami DODO ,  Gaku WATANABE ,  Hiroyuki WADA

IPC: H01L21/68 ,  H01L21/687

CPC classification number: H01L21/681 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing apparatus includes a vacuum container, a rotary table, a stage, a lifter, and a controller that controls an operation of the lifter. The controller automatically sets a control position in the operation of the lifter. The controller, in (A), repeatedly raises the lifter by a first pitch and then determines whether or not the lifter has come into contact with a substrate, thereby bring the lifter to come into contact with the substrate to set a next position. The controller, in (B), repeatedly raises the lifter from the next position by a second pitch shorter than the first pitch and then determines whether or not the lifter has come into contact with the substrate, thereby detecting a touch position and calculating the control position based on the touch position.

公开(公告)号：US20170183777A1

公开(公告)日：2017-06-29

申请号：US15386724

申请日：2016-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki IKEGAWA ,  Hiroyuki WADA ,  Katsuyuki HISHIYA

IPC: C23C16/50 ,  H01L21/02 ,  C23C16/44 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted about a rotational center thereof; a first gas supply part for supplying a source gas to a first region through injection portions formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying a separation gas for separating inner and outer sides of a second closed path from each other; a third gas supply part including two gas injectors arranged to extend at a certain interval in the crossing direction; a plasma generation part for reaction gas for plasmarizing the reaction gas injected toward the second region; and other process regions in which processes different from the supply of the source gas and the supply of the reaction gas are performed.

公开(公告)号：US20210095375A1

公开(公告)日：2021-04-01

申请号：US17027409

申请日：2020-09-21

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  C23C16/452

Abstract: A film forming apparatus sequentially supplies a raw material gas of a compound containing chlorine and an element other than the chlorine, and a first reaction to form a fil. The film forming apparatus includes a rotary table, a raw material gas ejection port configured to eject the raw material gas to a first region, a reaction gas supply part configured to supply, to a second region, a first reaction gas and a second reaction gas that reacts with chlorine to generate a third reaction product, in order to prevent a second reaction product from being generated due to a reaction of the chlorine remaining in the vacuum container with air when performing the opening-to-air. The film forming apparatus further includes an atmosphere separation part, a first exhaust port and a second exhaust port, and a controller.

公开(公告)号：US20170183779A1

公开(公告)日：2017-06-29

申请号：US15387043

申请日：2016-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki IKEGAWA ,  Hiroyuki WADA ,  Katsuyuki HISHIYA

IPC: C23C16/511 ,  H01L21/02 ,  C23C16/44 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: An apparatus includes: a rotatable table for revolving a substrate mounting region on which a substrate is mounted; a first gas supply part for supplying a source gas to a first region through an injection portion formed to face the rotatable table; an exhaust part for exhausting a gas through an exhaust port; a second gas supply part for supplying an separation gas for separating inner and outer sides of a second closed path from each other through an separation gas supply port formed to extend along the second closed path surrounding the exhaust port; a third gas supply part including two gas injectors arranged to extend at a certain interval in a direction crossing the revolutional direction with a second region defined outside the second closed path interposed between the gas injectors; and a plasma generation part for plasmarizing a reaction gas.