公开(公告)号：US20170038688A1

公开(公告)日：2017-02-09

申请号：US15227243

申请日：2016-08-03

Applicant: Tokyo Electron Limited

Inventor： Jun NONAKA

IPC: G03F7/16

CPC classification number: G03F7/16 ,  G03F7/30 ,  H01L21/67017

Abstract: A substrate liquid treatment method includes: (a) rotating the substrate about the vertical axis; (b) supplying the treatment liquid to the rotating substrate from the second nozzle with a falling point of the treatment liquid supplied from the second nozzle moving from the central portion to the peripheral portion of the substrate, while supplying the treatment liquid to the central portion of the substrate from the first nozzle, (c) after (b), moving the second nozzle from the peripheral portion to the central portion of the substrate with the supplying of the treatment liquid from the second nozzle being stopped, while continuing supplying the treatment liquid to the central portion of the rotating substrate from the first nozzle; and (d) after (c), supplying the treatment liquid to the rotating substrate from the second nozzle.

Abstract translation: 基板液体处理方法包括：（a）绕垂直轴旋转基板; （b）从所述第二喷嘴将所述处理液从所述第二喷嘴供给的处理液的下落点从所述中心部向所述基板的周边部供给，同时将所述处理液供给到所述中央部 （c）之后，（b）中，将第二喷嘴从周边部分移动到基板的中心部分，同时停止从第二喷嘴供给处理液体，同时继续供应处理 液体从第一喷嘴到旋转基板的中心部分; 和（d）之后（c），从第二喷嘴将处理液供给旋转基板。

公开(公告)号：US20230015936A1

公开(公告)日：2023-01-19

申请号：US17863427

申请日：2022-07-13

Applicant: Tokyo Electron Limited

Inventor： Yuta HAMASHIMA ,  Jun NONAKA

IPC: H01L21/67

Abstract: A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

公开(公告)号：US20210391539A1

公开(公告)日：2021-12-16

申请号：US17336657

申请日：2021-06-02

Applicant: Tokyo Electron Limited

Inventor： Koukichi HIROSHIRO ,  Jun NONAKA ,  Kazuya KOYAMA ,  Mitsunori NAKAMORI

IPC: H01L51/00

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

公开(公告)号：US20220139734A1

公开(公告)日：2022-05-05

申请号：US17577143

申请日：2022-01-17

Applicant: Tokyo Electron Limited

Inventor： Kouji OGURA ,  Jun NONAKA ,  Takao INADA ,  Yoshinori NISHIWAKI ,  Hiroshi YOSHIDA

IPC: H01L21/67

Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

公开(公告)号：US20210368586A1

公开(公告)日：2021-11-25

申请号：US17321514

申请日：2021-05-17

Applicant: Tokyo Electron Limited

Inventor： Koji OGURA ,  Hiroshi YOSHIDA ,  Takashi NAGAI ,  Jun NONAKA ,  Keita HIRASE

IPC: H05B1/02 ,  H01L21/67

Abstract: A storage device according to an aspect of the present disclosure includes a storage tank, a heating mechanism, and a controller. The storage tank stores a processing liquid that contains an aqueous solution of phosphoric acid and an additive. The heating mechanism heats the processing liquid that is stored in the storage tank. The controller controls the heating mechanism to execute a concentration maintaining process where a temperature of the processing liquid is adjusted in such a manner that an amount of evaporation of water for the processing liquid in the storage tank approaches an amount of absorption of moisture for the processing liquid in the storage tank.

公开(公告)号：US20180254199A1

公开(公告)日：2018-09-06

申请号：US15907394

申请日：2018-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki SUZUKI ,  Takashi YABUTA ,  Jun NONAKA

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  H01L21/02

Abstract: A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.

公开(公告)号：US20240379388A1

公开(公告)日：2024-11-14

申请号：US18748171

申请日：2024-06-20

Applicant: Tokyo Electron Limited

Inventor： Kouji OGURA ,  Jun NONAKA ,  Takao INADA ,  Yoshinori NISHIWAKI ,  Hiroshi YOSHIDA

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing bath in which a substate is immersed to be processed; a mixer that generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide; a liquid path that supplies the mixture liquid from the mixer to the processing bath; a silicon solution supply that supplies a silicon-containing compound aqueous to the mixture liquid supplied from the mixer; and a controller that controls the processing bath, the mixer, the liquid path, and the silicon solution supply. When the substrate is immersed in the processing bath, the controller supplies the mixture liquid without the silicon-containing compound aqueous solution to the processing bath.

公开(公告)号：US20230023265A1

公开(公告)日：2023-01-26

申请号：US17859007

申请日：2022-07-07

Applicant: Tokyo Electron Limited

Inventor： Jun NONAKA ,  Yuta HAMASHIMA

IPC: H01L21/67 ,  C23C16/44

Abstract: A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

公开(公告)号：US20220168785A1

公开(公告)日：2022-06-02

申请号：US17442137

申请日：2020-08-17

Applicant: Tokyo Electron Limited

Inventor： Jun NONAKA ,  Mitsunori NAKAMORI

IPC: B08B3/10

Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

公开(公告)号：US20210366740A1

公开(公告)日：2021-11-25

申请号：US17326821

申请日：2021-05-21

Applicant: Tokyo Electron Limited

Inventor： Keita HIRASE ,  Koji OGURA ,  Hiroshi YOSHIDA ,  Takashi NAGAI ,  Jun NONAKA ,  Takumi HONDA

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.