Abstract:
There is provided a substrate processing method for performing an etching processing by immersing a substrate in a processing liquid containing a chemical liquid and silicon, the substrate processing method including: a preparation step of setting a supply flow rate of the chemical liquid based on a replenishment amount of the chemical liquid and a replenishment amount of the silicon; and a replenishment step of supplying the chemical liquid at the set supply flow rate of the chemical liquid and dissolving a set replenishment amount of the silicon in the processing liquid.
Abstract:
A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.
Abstract:
A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.