SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20220316059A1

    公开(公告)日:2022-10-06

    申请号:US17628682

    申请日:2020-07-13

    Abstract: A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

    SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING SUBSTRATE

    公开(公告)号:US20210391539A1

    公开(公告)日:2021-12-16

    申请号:US17336657

    申请日:2021-06-02

    Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明公开

    公开(公告)号:US20240332040A1

    公开(公告)日:2024-10-03

    申请号:US18612873

    申请日:2024-03-21

    CPC classification number: H01L21/67069

    Abstract: A substrate liquid-processing apparatus includes: an irradiation unit that radiates an etching energy beam having a wavelength of 185 nm or less toward the peripheral edge of a substrate; a gas supply unit that supplies an oxygen-containing gas or ozone gas to the peripheral edge of the substrate; a peripheral edge heating unit that is arranged to be located above the substrate, extends in a circular arc or annular shape along the peripheral edge of the substrate, and heats the peripheral edge of the substrate by radiating light to the peripheral edge of the substrate; a light shielding member that is disposed between the substrate and the peripheral edge heating unit, and blocks at least a portion of the light from the peripheral edge heater toward the peripheral edge of the substrate; and a driving unit that changes the separation distance between the substrate and the light shielding member.

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