公开(公告)号：US09976217B2

公开(公告)日：2018-05-22

申请号：US14511399

申请日：2014-10-10

申请人： Tokyo Electron Limited

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

IPC分类号： C23C16/16 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

摘要： The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.

公开(公告)号：US20150349668A1

公开(公告)日：2015-12-03

申请号：US14721408

申请日：2015-05-26

申请人： Tokyo Electron Limited

发明人： Kaoru Yamamoto ,  Shinji Orimoto ,  Naoyuki Suzuki

IPC分类号： H02N13/00 ,  H01L21/683

CPC分类号： H02N13/00 ,  H01L21/6833 ,  H01L21/68742 ,  H01L21/6875

摘要： Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. An attraction electrode is formed on the first portion of the first insulating layer. A second insulating layer is formed on the first portion of the first insulating layer and the attraction electrode. A conductor pattern extends from the attraction electrode and provides a power supply terminal on the second portion of the first insulating layer. A contact part of a terminal member urged by an urging unit is in contact with the power supply terminal. The terminal member is connected with a wiring line connected to a supply power.

摘要翻译： 提供一种静电吸引装置，其中在静电卡盘中的基座上形成第一绝缘层。 第一绝缘层的第一部分在基底的第一面上延伸，第一绝缘层的第二部分在基底的第二面的至少一部分上延伸。 吸引电极形成在第一绝缘层的第一部分上。 在第一绝缘层和吸引电极的第一部分上形成第二绝缘层。 导体图案从吸引电极延伸，并在第一绝缘层的第二部分上提供电源端子。 由推压单元推压的端子构件的接触部与电源端子接触。 端子构件与连接到电源的布线相连。

公开(公告)号：US09896761B2

公开(公告)日：2018-02-20

申请号：US14491940

申请日：2014-09-19

申请人： TOKYO ELECTRON LIMITED

发明人： Masamichi Hara ,  Kaoru Yamamoto ,  Yasushi Mizusawa

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01J37/32 ,  C23C16/16 ,  B01D8/00 ,  F15D1/00

CPC分类号： C23C16/4412 ,  B01D8/00 ,  B01D2258/0216 ,  C23C16/16 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/463 ,  F15D1/0005 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

摘要： A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. The plurality of trap units are arranged successively along a flow direction of said exhaust gas. Each trap unit includes a set of trap panels parallel to each other and spaced apart from each other. The two opposite surfaces with a larger area of each trap panel are oriented substantially parallel to a flow direction of the exhaust gas flow. The two opposite surfaces with a smaller area of each trap panels are oriented orthogonal to the exhaust gas flow.

公开(公告)号：US20150044368A1

公开(公告)日：2015-02-12

申请号：US14511399

申请日：2014-10-10

申请人： Tokyo Electron Limited

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/16

CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

摘要翻译： 提供一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）和布置在放置台中的分解抑制气体供应装置的放置台 用于将抑制原料气体的热分解的分解抑制气体朝向放置在放置台的放置面的被处理体的周边部分的目的。

公开(公告)号：US09787222B2

公开(公告)日：2017-10-10

申请号：US14721408

申请日：2015-05-26

申请人： Tokyo Electron Limited

发明人： Kaoru Yamamoto ,  Shinji Orimoto ,  Naoyuki Suzuki

IPC分类号： H02N13/00 ,  H01L21/683 ,  H01L21/687

CPC分类号： H02N13/00 ,  H01L21/6833 ,  H01L21/68742 ,  H01L21/6875

摘要： Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. An attraction electrode is formed on the first portion of the first insulating layer. A second insulating layer is formed on the first portion of the first insulating layer and the attraction electrode. A conductor pattern extends from the attraction electrode and provides a power supply terminal on the second portion of the first insulating layer. A contact part of a terminal member urged by an urging unit is in contact with the power supply terminal. The terminal member is connected with a wiring line connected to a supply power.

公开(公告)号：US09673078B2

公开(公告)日：2017-06-06

申请号：US14721452

申请日：2015-05-26

申请人： TOKYO ELECTRON LIMITED

发明人： Tetsuya Miyashita ,  Masamichi Hara ,  Naoyuki Suzuki ,  Kaoru Yamamoto ,  Kouji Maeda

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/6833 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6875

摘要： A cooling processing apparatus includes: a processing vessel; an electrostatic chuck installed in the processing vessel, the electrostatic chuck having a mounting surface on which an object to be processed is mounted; a cooling mechanism configured to cool the electrostatic chuck; and a lamp heating device configured to remove moisture attached to the mounting surface. Further, a method for operating the cooling processing apparatus includes: decompressing the space in the processing vessel by using the exhaust device; removing the moisture attached to the mounting surface of the electrostatic chuck by using the lamp heating device; and cooling the electrostatic chuck by using the cooling mechanism after the removal of the moisture performed by the lamp heating device is terminated.