公开(公告)号：US20210166958A1

公开(公告)日：2021-06-03

申请号：US17104499

申请日：2020-11-25

Applicant: Tokyo Electron Limited

Inventor： Kazuki OSHIMA

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: A substrate processing apparatus includes a conductive enclosure having a gas passage, a conductive member having a gas passage, and a piping assembly including a hollow tube having an inner sidewall, a core block disposed in the hollow tube, the core block having an outer sidewall fitting the inner sidewall of the hollow tube, the core block having a first dielectric constant, and at least one dielectric member disposed in at least one of the hollow tube and the core block, the dielectric member having a second dielectric constant higher than the first dielectric constant.

公开(公告)号：US20210358725A1

公开(公告)日：2021-11-18

申请号：US17236165

申请日：2021-04-21

Applicant: Tokyo Electron Limited

Inventor： Kazuki OSHIMA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

Abstract: A substrate support assembly for mounting a substrate is provided. The substrate support assembly includes: a substrate mounting section on which a substrate is to be placed; an edge ring mounting section; an edge ring mounted on the edge ring mounting section so as to surround the substrate; a dielectric member having a temperature dependent permittivity provided under the edge ring; and a temperature control member configured to adjust a temperature of the dielectric member. The dielectric member and the temperature control member are disposed apart from the edge ring.

公开(公告)号：US20240030003A1

公开(公告)日：2024-01-25

申请号：US18351172

申请日：2023-07-12

Applicant: Tokyo Electron Limited

Inventor： Torai IWASA ,  Takehiro TANIKAWA ,  Masaya HERAI ,  Kazuki OSHIMA ,  Yuzuru SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32568 ,  H01J2237/334 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.

公开(公告)号：US20210183629A1

公开(公告)日：2021-06-17

申请号：US17117177

申请日：2020-12-10

Applicant: Tokyo Electron Limited

Inventor： Kazuki OSHIMA ,  Shingo OGUMA

IPC: H01J37/32

Abstract: Provided is a technique capable of adjusting an angle of incidence of ions. Provided is a ring assembly including: a conductive edge ring; an insulating annular member including at least an inner peripheral portion disposed on the edge ring; and a conductive member disposed on at least a portion of an upper surface of the annular member overlapping with the edge ring in top plan view.