公开(公告)号：US20230395360A1

公开(公告)日：2023-12-07

申请号：US18205426

申请日：2023-06-02

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Koki TANAKA ,  Yuzuru SAKAI ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J2237/182 ,  H01J37/32449 ,  H01J37/32137

Abstract: Provided is a technique capable of suppressing pressure fluctuations within a plasma processing chamber. A plasma processing apparatus according to the present disclosure includes: a chamber; a gas supply that supplies a processing gas into the chamber; a power supply that generates a source RF signal to form a plasma from the processing gas within the chamber; a storage that stores in advance a source set value that is a set value of a parameter of the source RF signal; a pressure regulation valve connected to the chamber, the pressure regulation valve being configured to regulate an internal pressure of the chamber; an opening degree calculator that calculates an opening degree of the pressure regulation valve, the opening degree being calculated based on the source set value; and an opening degree controller that controls the opening degree of the pressure regulation valve based on the calculated opening degree.

公开(公告)号：US20210313151A1

公开(公告)日：2021-10-07

申请号：US17220982

申请日：2021-04-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi TOHARA ,  Naokazu FURUYA ,  Yosuke TAMURO ,  Yuzuru SAKAI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.

公开(公告)号：US20240047184A1

公开(公告)日：2024-02-08

申请号：US18359163

申请日：2023-07-26

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Yuzuru SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/024

Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a movable member and a stationary member each disposed around the substrate support, the movable member having a plurality of moving blades, the plurality of moving blades being rotatable, the stationary member having a plurality of stationary blades, the plurality of moving blades and the plurality of stationary blades being alternately disposed along a height direction of the plasma processing chamber, and an exhaust space being formed beneath the movable member and the stationary member; a first driver configured to rotate the movable member; a pressure regulating member movably disposed around the substrate support and above the movable member and the stationary member; and a second driver configured to move the pressure regulating member.

公开(公告)号：US20240030003A1

公开(公告)日：2024-01-25

申请号：US18351172

申请日：2023-07-12

Applicant: Tokyo Electron Limited

Inventor： Torai IWASA ,  Takehiro TANIKAWA ,  Masaya HERAI ,  Kazuki OSHIMA ,  Yuzuru SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32568 ,  H01J2237/334 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.

公开(公告)号：US20220122847A1

公开(公告)日：2022-04-21

申请号：US17450886

申请日：2021-10-14

Applicant: Tokyo Electron Limited

Inventor： Yuzuru SAKAI ,  Ryo TERASHIMA

IPC: H01L21/311 ,  H01J37/32

Abstract: A plasma processing apparatus includes a plurality of plasma processing chambers, a process gas supply line that supplies a plasma processing gas to the plasma processing chambers, a first additive gas supply line that supplies an additive gas to the plasma processing chambers, an exhaust space shared by the plurality of plasma processing chambers, and a controller. The controller determines a first plasma processing chamber group and a second plasma processing chamber group. The first plasma processing chamber group includes one or more plasma processing chambers, each of which performs the plasma processing and the second plasma processing chamber group includes one or more plasma processing chambers, each of which does not perform the plasma processing. The controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.

公开(公告)号：US20210134596A1

公开(公告)日：2021-05-06

申请号：US17084792

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Ryo TERASHIMA ,  Yuzuru SAKAI

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32

Abstract: A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.