公开(公告)号：US20220028665A1

公开(公告)日：2022-01-27

申请号：US17495908

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

公开(公告)号：US11170979B2

公开(公告)日：2021-11-09

申请号：US16722248

申请日：2019-12-20

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

公开(公告)号：US20190057845A1

公开(公告)日：2019-02-21

申请号：US16104512

申请日：2018-08-17

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

公开(公告)号：US11251048B2

公开(公告)日：2022-02-15

申请号：US16896304

申请日：2020-06-09

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Fumiya Takata ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H05H1/24 ,  C23C16/44

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

公开(公告)号：US11594398B2

公开(公告)日：2023-02-28

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US10553407B2

公开(公告)日：2020-02-04

申请号：US16104512

申请日：2018-08-17

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.