公开(公告)号：US11251048B2

公开(公告)日：2022-02-15

申请号：US16896304

申请日：2020-06-09

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Toshikatsu Tobana ,  Fumiya Takata ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  H05H1/24 ,  C23C16/44

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

公开(公告)号：US11062882B2

公开(公告)日：2021-07-13

申请号：US16743788

申请日：2020-01-15

Applicant: Tokyo Electron Limited

Inventor： Yusuke Aoki ,  Shinya Morikita ,  Toshikatsu Tobana ,  Fumiya Takata

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

公开(公告)号：US11594398B2

公开(公告)日：2023-02-28

申请号：US16790028

申请日：2020-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Aoki ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita ,  Kazunobu Fujiwara ,  Jun Abe ,  Koichi Nagami

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  B08B5/00

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

公开(公告)号：US11569094B2

公开(公告)日：2023-01-31

申请号：US17190651

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Kota Ishiharada ,  Fumiya Takata ,  Toshikatsu Tobana ,  Shinya Morikita

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.