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1.发明授权公开(公告)号：US08703002B2
公开(公告)日：2014-04-22
申请号：US13737313
申请日：2013-01-09
Applicant: Tokyo Electron Limited
Inventor： Tatsuo Matsudo , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC: H01L21/3065
CPC classification number: H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
Abstract: A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
Abstract translation: 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。
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公开(公告)号：US10388544B2
公开(公告)日：2019-08-20
申请号：US14626277
申请日：2015-02-19
Applicant: KABUSHIKI KAISHA TOSHIBA , TOKYO ELECTRON LIMITED
Inventor： Akio Ui , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
IPC: H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/66
Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
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公开(公告)号：US12205801B2
公开(公告)日：2025-01-21
申请号：US17468935
申请日：2021-09-08
Applicant: Tokyo Electron Limited
Inventor： Toshiaki Saijo , Jun Abe , Shogo Shoji , Junya Kato
IPC: H01J37/32
Abstract: In a plasma processing apparatus, a controller specifies a time point when a current starts to flow between an edge ring and a DC power supply after beginning an application of a negative DC voltage to the edge ring from the DC power supply. The controller specifies, from a voltage measurement value indicating a voltage of the edge ring at the time point, an estimate of a self-bias voltage of the edge ring generated by a supply of a radio frequency power. The controller sets a sum of an absolute value of the estimate of the self-bias voltage and a set value as an absolute value of the negative DC voltage to be applied to the edge ring by the DC power supply.
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公开(公告)号：US11594398B2
公开(公告)日：2023-02-28
申请号：US16790028
申请日：2020-02-13
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yusuke Aoki , Fumiya Takata , Toshikatsu Tobana , Shinya Morikita , Kazunobu Fujiwara , Jun Abe , Koichi Nagami
IPC: C23C16/00 , H01L21/306 , H01J37/32 , B08B5/00
Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.
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公开(公告)号：US20180374720A1
公开(公告)日：2018-12-27
申请号：US16010658
申请日：2018-06-18
Applicant: Tokyo Electron Limited
Inventor： Shinji Himori , Jun Abe
Abstract: A gas exhaust plate capable of improving a confinement effect of plasma while achieving sufficient conductance is provided. The gas exhaust plate is provided between a sidewall of a processing vessel of a plasma processing apparatus and a mounting table provided within the processing vessel, and is configured to separate a processing space in which a processing is performed by a plasmarized gas from a gas exhaust space which is adjacent to the processing space and through which a gas generated by the processing is exhausted. The gas exhaust plate includes a porous metal sheet.
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Patent Agency Ranking
公开(公告)号：US09564287B2
公开(公告)日：2017-02-07
申请号：US14036885
申请日：2013-09-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
CPC classification number: H01J37/02 , H01J37/32091 , H01J37/32146 , H01J37/32165
Abstract: A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
Abstract translation: 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。
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公开(公告)号：US20220076930A1
公开(公告)日：2022-03-10
申请号：US17468935
申请日：2021-09-08
Applicant: Tokyo Electron Limited
Inventor： Toshiaki Saijo , Jun Abe , Shogo Shoji , Junya Kato
IPC: H01J37/32
Abstract: In a plasma processing apparatus, a controller specifies a time point when a current starts to flow between an edge ring and a DC power supply after beginning an application of a negative DC voltage to the edge ring from the DC power supply. The controller specifies, from a voltage measurement value indicating a voltage of the edge ring at the time point, an estimate of a self-bias voltage of the edge ring generated by a supply of a radio frequency power. The controller sets a sum of an absolute value of the estimate of the self-bias voltage and a set value as an absolute value of the negative DC voltage to be applied to the edge ring by the DC power supply.
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公开(公告)号：US11251048B2
公开(公告)日：2022-02-15
申请号：US16896304
申请日：2020-06-09
Applicant: Tokyo Electron Limited
Inventor： Yusuke Aoki , Toshikatsu Tobana , Fumiya Takata , Shinya Morikita , Kazunobu Fujiwara , Jun Abe , Koichi Nagami
IPC: H01J37/32 , H01L21/3065 , H01L21/02 , H05H1/24 , C23C16/44
Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.
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公开(公告)号：US09500537B2
公开(公告)日：2016-11-22
申请号：US15073273
申请日：2016-03-17
Applicant: TOKYO ELECTRON LIMITED
Inventor： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
CPC classification number: G01K11/00 , G01K11/125
Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
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公开(公告)号：US09304050B2
公开(公告)日：2016-04-05
申请号：US14070714
申请日：2013-11-04
Applicant: TOKYO ELECTRON LIMITED
Inventor： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
CPC classification number: G01K11/00 , G01K11/125
Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.
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