公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

公开(公告)号：US20240120312A1

公开(公告)日：2024-04-11

申请号：US18373098

申请日：2023-09-26

Applicant: Tokyo Electron Limited

Inventor： Kevin RYAN

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065 ,  H01L21/822

CPC classification number: H01L24/80 ,  H01L22/14 ,  H01L24/08 ,  H01L25/0655 ,  H01L21/8221 ,  H01L2224/08121 ,  H01L2224/08235 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/37001 ,  H01L2924/381

Abstract: Shifted multi-via connections are disclosed. A method includes providing a first contact array structure on a first substrate. The first contact array structure includes a plurality of first contacts. The method includes providing a second contact array structure on a second substrate. The second contact array structure includes a plurality of second contacts configured to interface with the plurality of first contacts. The method includes bonding the first substrate to the second substrate. Portions of the first contact array structure, the second contact array structure or both the first and second contact array structures are intentionally shifted to compensate for misalignment that occurs during the bonding of the first substrate to the second substrate.