公开(公告)号：US20240082956A1

公开(公告)日：2024-03-14

申请号：US18262201

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: B23K26/352 ,  B23K26/082 ,  H01L21/304 ,  H01L21/683

CPC classification number: B23K26/352 ,  B23K26/082 ,  H01L21/304 ,  H01L21/6831

Abstract: A substrate processing method includes (A) to (C) to be described below. (A) A substrate having a first main surface and a second main surface opposite to the first main surface, and having unevenness on each of the first main surface and the second main surface is prepared. (B) Based on a measurement result of the unevenness of a first surface between the first main surface and the second main surface of the substrate, the first surface is planarized by radiating a laser beam to the first surface. (C) After planarizing the first surface of the substrate, a second surface of the substrate opposite to the first surface is planarized by grinding the second surface.

公开(公告)号：US20220406602A1

公开(公告)日：2022-12-22

申请号：US17772163

申请日：2020-09-11

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/304 ,  B23K26/53 ,  B24B7/22

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

公开(公告)号：US20220168850A1

公开(公告)日：2022-06-02

申请号：US17436795

申请日：2020-03-02

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA

IPC: B23K26/53 ,  B23K26/08 ,  B23K26/03 ,  B23K26/062

Abstract: In forming modification layers by radiating laser light to an inside of a processing target object from a modifying device periodically while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and by moving the modifying device relative to the holder in a diametrical direction by a moving mechanism, a boundary position of the laser light in the diametrical direction is calculated, the boundary position being a position where a circumferential distance between the modification layers becomes a required threshold value, and a diametrical distance between the modification layers is reduced in a moving direction of the modifying device from the boundary position and/or a frequency of the laser light is reduced.

公开(公告)号：US20250153278A1

公开(公告)日：2025-05-15

申请号：US18839180

申请日：2023-01-23

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/042 ,  B23K101/40

Abstract: A processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other includes acquiring an eccentric amount between the first substrate and the second substrate; forming, by radiating internal laser light along a boundary between a peripheral portion of the first substrate and a central portion of the first substrate, a peripheral modification layer serving as a starting point of separation of the peripheral portion; and removing the peripheral portion starting from the peripheral modification layer. In the forming of the peripheral modification layer, an irradiation position of the internal laser light is determined based on the eccentric amount.

公开(公告)号：US20250153272A1

公开(公告)日：2025-05-15

申请号：US18833922

申请日：2023-01-11

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA

IPC: B23K26/0622 ,  B23K26/06 ,  B23K26/067 ,  B23K26/082 ,  B23K101/40 ,  G02B27/28 ,  H01L21/67

Abstract: A substrate processing method of processing a substrate includes radiating multiple branch laser lights, which are obtained by branching laser light from a laser head, in a pulse shape in an outer peripheral region of the substrate; and radiating single laser light, which is obtained by not branching the laser light, in a pulse shape in a central region diametrically inside the outer peripheral region. A substrate processing apparatus configured to process the substrate includes a substrate holder configured to hold the substrate; a laser radiation device configured to radiate the laser light to the substrate held by the substrate holder; and a controller. The laser radiation device includes the laser head configured to oscillate the laser light; and an optical system configured to branch the laser light from the laser head.

公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20240253154A1

公开(公告)日：2024-08-01

申请号：US18289269

申请日：2022-03-24

Applicant: HAMAMATSU PHOTONICS K.K. ,  Tokyo Electron Limited

Inventor： Yo SUGIMOTO ,  Yohei YAMASHITA

IPC: B23K26/0622 ,  B23K26/03 ,  B23K31/12 ,  B23K101/40

CPC classification number: B23K26/0622 ,  B23K26/032 ,  B23K31/12 ,  B23K2101/40

Abstract: Provided is a laser processing apparatus configured to irradiate a substrate including a first main surface and a second main surface opposite to the first main surface with processing laser light. The laser processing apparatus includes: a processing irradiation unit configured to irradiate the substrate with the processing laser light from the second main surface side; an observation irradiation unit configured to irradiate the substrate with observation transmission light from the second main surface side; an imaging element configured to image the observation transmission light from the substrate; and a controller configured to execute a processing process of irradiating the substrate with the processing laser light by controlling the processing irradiation unit, and a characteristic acquisition process of irradiating the substrate with the observation transmission light, imaging the observation transmission light from the substrate.

公开(公告)号：US20240030021A1

公开(公告)日：2024-01-25

申请号：US18044386

申请日：2021-08-27

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/66 ,  B23K26/361 ,  B23K26/03 ,  B24B7/22

CPC classification number: H01L21/02035 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67288 ,  H01L21/02013 ,  H01L21/02019 ,  H01L22/20 ,  B23K26/361 ,  B23K26/032 ,  B24B7/22 ,  B23K2103/56

Abstract: A laser processing apparatus includes a holder configured to hold a substrate obtained by slicing a single crystal ingot; a light source configured to oscillate a laser beam to be radiated to a first main surface of the substrate; a moving unit configured to move a position of a radiation point of the laser beam on the first main surface of the substrate in a state that the substrate is held by the holder; and a controller configured to control the light source and the moving unit. The controller controls the light source and the moving unit to radiate the laser beam to the first main surface of the substrate to remove a surface layer of the first main surface of the substrate, so that fragment adhering to the first main surface during the slicing of the single crystal ingot is removed.

公开(公告)号：US20220254638A1

公开(公告)日：2022-08-11

申请号：US17627706

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  B23K26/53

Abstract: A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction of the processing target object; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form: a peripheral modification layer which serves as a starting point where a peripheral portion of the processing target object as a removing target is detached; a first internal modification layer in a ring shape to be concentric with the peripheral modification layer at a diametrically inner side than the peripheral modification layer; and a second internal modification layer in a spiral shape at a diametrically inner side than the first internal modification layer.

公开(公告)号：US20240404852A1

公开(公告)日：2024-12-05

申请号：US18697028

申请日：2022-09-16

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Hayato TANOUE ,  Gousuke SHIRAISHI

IPC: H01L21/67 ,  B23K26/36 ,  H01L21/02 ,  H01L21/66 ,  H01L21/68

Abstract: A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removal target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate at the peripheral portion is reduced; forming a reference modification layer, which serves as a determination reference of a formation position of either the peripheral modification layer or the non-bonding region, at a non-bonding surface of the first substrate not bonded to the second substrate; and removing the peripheral portion starting from the peripheral modification layer.