公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.