公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20240030021A1

公开(公告)日：2024-01-25

申请号：US18044386

申请日：2021-08-27

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/66 ,  B23K26/361 ,  B23K26/03 ,  B24B7/22

CPC classification number: H01L21/02035 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/67288 ,  H01L21/02013 ,  H01L21/02019 ,  H01L22/20 ,  B23K26/361 ,  B23K26/032 ,  B24B7/22 ,  B23K2103/56

Abstract: A laser processing apparatus includes a holder configured to hold a substrate obtained by slicing a single crystal ingot; a light source configured to oscillate a laser beam to be radiated to a first main surface of the substrate; a moving unit configured to move a position of a radiation point of the laser beam on the first main surface of the substrate in a state that the substrate is held by the holder; and a controller configured to control the light source and the moving unit. The controller controls the light source and the moving unit to radiate the laser beam to the first main surface of the substrate to remove a surface layer of the first main surface of the substrate, so that fragment adhering to the first main surface during the slicing of the single crystal ingot is removed.

公开(公告)号：US20240355669A1

公开(公告)日：2024-10-24

申请号：US18689484

申请日：2022-08-26

Applicant: Tokyo Electron Limited

Inventor： Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/76243 ,  H01L21/30625 ,  H01L21/67092 ,  H01L21/76254

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other is provided. A device layer including multiple devices is formed on a front surface side of the first substrate. The substrate processing method includes forming a light leakage prevention layer by radiating first laser light to an oxygen-containing film formed between the device layer and a position where a modification layer serving as a starting point for separation of the first substrate is formed; forming the modification layer by radiating second laser light to an inside of the first substrate after the forming of the light leakage prevention layer; and separating the first substrate starting from the modification layer to thin the first substrate.

公开(公告)号：US20240153822A1

公开(公告)日：2024-05-09

申请号：US18549610

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/67092 ,  H01L21/6836

Abstract: A semiconductor chip manufacturing method includes (A) to (E) described below. (A) preparing a stacked substrate including a first semiconductor substrate, a device layer, a separation layer, and a third semiconductor substrate in this order. (B) dicing the first semiconductor substrate, the device layer, and the separation layer. (C) attaching the diced stacked substrate to a tape from an opposite side to the third semiconductor substrate, and mounting the diced stacked substrate to a frame with the tape therebetween. (D) radiating, after mounting the stacked substrate to the frame, a laser beam penetrating the third semiconductor substrate to the separation layer to form a modification layer at an interface between the third semiconductor substrate and the separation layer, or at an inside of the separation layer. (E) separating the third semiconductor substrate and the separation layer starting from the modification layer.

公开(公告)号：US20240082956A1

公开(公告)日：2024-03-14

申请号：US18262201

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: B23K26/352 ,  B23K26/082 ,  H01L21/304 ,  H01L21/683

CPC classification number: B23K26/352 ,  B23K26/082 ,  H01L21/304 ,  H01L21/6831

Abstract: A substrate processing method includes (A) to (C) to be described below. (A) A substrate having a first main surface and a second main surface opposite to the first main surface, and having unevenness on each of the first main surface and the second main surface is prepared. (B) Based on a measurement result of the unevenness of a first surface between the first main surface and the second main surface of the substrate, the first surface is planarized by radiating a laser beam to the first surface. (C) After planarizing the first surface of the substrate, a second surface of the substrate opposite to the first surface is planarized by grinding the second surface.

公开(公告)号：US20230264309A1

公开(公告)日：2023-08-24

申请号：US17997558

申请日：2021-04-07

Applicant: Tokyo Electron Limited

Inventor： Yasutaka MIZOMOTO ,  Susumu HAYAKAWA

IPC: B23Q3/157 ,  B24B45/00 ,  B23Q3/155

CPC classification number: B23Q3/15713 ,  B24B45/003 ,  B23Q3/1554

Abstract: A replacing apparatus is configured to replace a processing tool in a processing apparatus. The processing apparatus includes a holder configured to hold a processing target object, a processing mechanism to which the processing tool configured to process the processing target object held by the holder is installed in a replaceable manner, and an exterior cover accommodating therein the holder and the processing mechanism. The replacing apparatus includes a replacing mechanism, a moving mechanism, a traveling table and a traveling mechanism. The replacing mechanism installs the processing tool to the processing mechanism, or separates the processing tool from the processing mechanism. The moving mechanism is configured to move the replacing mechanism from an outside of the exterior cover to an inside thereof through an entrance opening of the exterior cover. The traveling table supports the moving mechanism. The traveling mechanism is configured to allow the traveling table to travel.

公开(公告)号：US20230182253A1

公开(公告)日：2023-06-15

申请号：US17997557

申请日：2021-04-07

Applicant: Tokyo Electron Limited

Inventor： Yasutaka MIZOMOTO ,  Susumu HAYAKAWA

IPC: B23Q11/08 ,  B24B45/00 ,  B24B55/06 ,  H01L21/304

CPC classification number: B23Q11/0891 ,  B24B45/00 ,  B24B55/06 ,  H01L21/304

Abstract: A processing apparatus includes a holder configured to hold a processing target object; a processing mechanism to which a processing tool configured to process the processing target object held by the holder is installed in a replaceable manner; and an exterior cover accommodating the holder and the processing mechanism therein. The exterior cover includes an entrance opening through which a replacing apparatus configured to replace the processing tool passes when advancing to an inside of the exterior cover from an outside thereof. The processing apparatus further includes a shutter configured to open or close the entrance opening of the exterior cover.

公开(公告)号：US20240162081A1

公开(公告)日：2024-05-16

申请号：US18549616

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/762 ,  B23K26/53 ,  B23K101/40 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/76256 ,  B23K26/53 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/268 ,  B23K2101/40

Abstract: A stacked substrate manufacturing method includes (A) to (D) described below. (A) forming a bonding layer, which includes an oxide layer, on a surface of a first semiconductor substrate. (B) bringing the oxide layer of the bonding layer into contact with a second semiconductor substrate, and bonding the first semiconductor substrate and the second semiconductor substrate with the bonding layer therebetween. (C) forming, after the bonding of the first semiconductor substrate and the second semiconductor substrate, a modification layer with a laser beam on a first division plane along which the first semiconductor substrate is to be divided in a thickness direction thereof. (D) thinning the first semiconductor substrate bonded to the second semiconductor substrate with the bonding layer therebetween by dividing the first semiconductor substrate starting from the modification layer formed at the first division plane.

公开(公告)号：US20230178374A1

公开(公告)日：2023-06-08

申请号：US17995171

申请日：2021-01-18

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO

IPC: H01L21/268 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01L21/67092

Abstract: A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

公开(公告)号：US20220406603A1

公开(公告)日：2022-12-22

申请号：US17772166

申请日：2020-09-03

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yasutaka MIZOMOTO ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/321 ,  H01L21/67 ,  H01L21/677

Abstract: A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.