公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20180076066A1

公开(公告)日：2018-03-15

申请号：US15565714

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Masashi ENOMOTO ,  Yoshihiro KONDO

IPC: H01L21/67 ,  H01L21/677 ,  G03F7/20

Abstract: A technique enabling a stable resist pattern forming process, when substrate processing apparatuses that perform a resist coating process separately from a developing process. A wafer having been heated after a resist coating process in a first substrate processing apparatus is also heated before an exposure process in a second substrate processing apparatus. Thus, even when amine in an atmosphere adheres to the wafer while it is being transported from the first substrate processing apparatus to the second substrate processing apparatus, the amine scatters by the heating process. At least one of a heating time and a heating temperature is adjusted based on a substrate rest time which includes a period of time between a time point at which a FOUP 10 is unloaded from the first substrate processing apparatus and a time point at which the FOUP 10 is loaded into the second substrate processing apparatus.

公开(公告)号：US20250149355A1

公开(公告)日：2025-05-08

申请号：US18833079

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Junichi KITANO ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Yoshihiro KONDO

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes a substrate cleaning device; a chip cleaning device; a chip bonding device; a transfer section; a first substrate transfer arm; and a first frame transfer arm. The substrate cleaning device is configured to clean a substrate. The chip cleaning device is configured to clean chips in a state where the chips are attached to a frame via a tape. The chip bonding device is configured to bond the chips to the substrate. The first substrate transfer arm is configured to hold and transfer the substrate. The first frame transfer arm is configured to hold and transfer the frame together with the chips. The first substrate transfer arm transfers the substrate from the substrate cleaning device to the chip bonding device, and the first frame transfer arm transfers the chips together with the frame from the chip cleaning device to the chip bonding device.

公开(公告)号：US20220113628A1

公开(公告)日：2022-04-14

申请号：US17496965

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Keiichi TANAKA ,  Kosuke YOSHIHARA ,  Yoshihiro KONDO ,  Makoto MURAMATSU ,  Teruhiko KODAMA

IPC: G03F7/16 ,  G03F7/20

Abstract: A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.