公开(公告)号：US10192758B2

公开(公告)日：2019-01-29

申请号：US15713800

申请日：2017-09-25

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US20140360536A1

公开(公告)日：2014-12-11

申请号：US14296813

申请日：2014-06-05

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

摘要翻译： 可以提高处理基板的生产量，并且可以降低其运行成本。 用处理液处理基板3并干燥基板3的基板处理装置1包括：基板旋转装置22，被配置为旋转基板3; 将处理液朝向基板3排出的处理液排出部13; 置换液体排出单元14，被配置为在衬底3上被处理液取代的取代液体相对于衬底3相对移动而朝向衬底3排出; 以及惰性气体排出单元15，其构造成在与替代液体排出单元14的移动方向不同的方向上移动，同时从基板3的上方沿倾斜方向朝向基板3的周边部分排出惰性气体。

公开(公告)号：US09805957B2

公开(公告)日：2017-10-31

申请号：US14296813

申请日：2014-06-05

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US20160300710A1

公开(公告)日：2016-10-13

申请号：US15084789

申请日：2016-03-30

申请人： Tokyo Electron Limited

发明人： Kotaro Oishi ,  Keisuke Egashira ,  Kouzou Tachibana ,  Hideaki Udou

IPC分类号： H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67

CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67028

摘要： Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.

摘要翻译： 公开了一种基材处理方法，其包括拒水性步骤，漂洗步骤和干燥步骤。 在拒水性步骤中，将被加热到第一预定温度然后达到比第一预定温度低的第二预定温度的拒水剂供应到基底。 在漂洗步骤中，在拒水步骤之后，向基材供给冲洗液。 在干燥步骤中，去除漂洗步骤后的基材上的漂洗液。

公开(公告)号：US20180012781A1

公开(公告)日：2018-01-11

申请号：US15713800

申请日：2017-09-25

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US09865452B2

公开(公告)日：2018-01-09

申请号：US15084789

申请日：2016-03-30

申请人： Tokyo Electron Limited

发明人： Kotaro Oishi ,  Keisuke Egashira ,  Kouzou Tachibana ,  Hideaki Udou

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02057 ,  H01L21/67017 ,  H01L21/67028

摘要： Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.