Abstract:
A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.
Abstract:
A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.
Abstract:
A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.
Abstract:
A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.
Abstract:
A drying time after cleaning a surface of a cleaning target including a wall which constitutes a processing chamber of a substrate processing apparatus and a device provided within the processing chamber can be shortened. After performing a cleaning process of dissolving a removal target adhering to the surface of the cleaning target with water by discharging the water into the processing chamber 20 and allowing the surface of the cleaning target 42, 20a and 53 to be wet with the water, a solvent supplying process of supplying a solvent having higher volatility than the water toward the water adhering to the surface of the cleaning target is performed by discharging the solvent into the processing chamber. Then, a drying process of drying the surface of the cleaning target is performed.
Abstract:
A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.
Abstract:
A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.
Abstract:
A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.
Abstract:
A substrate processing method includes: supplying a treatment liquid to a substrate held in a horizontal position; substituting the treatment liquid supplied to the substrate with a solvent having a lower surface tension than the treatment liquid; and drying the substrate by shaking off the solvent on the substrate at a preset rotation number so that an intermediate portion of the substrate located between a central portion and a peripheral portion of the substrate is last dried.
Abstract:
A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.