公开(公告)号：US20150114930A1

公开(公告)日：2015-04-30

申请号：US14527536

申请日：2014-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo NONAKA ,  Masanori SATO ,  Natsuki YABUMOTO ,  Takamitsu TAKAYAMA ,  Akitoshi HARADA ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC: H01J37/32 ,  C23C4/12 ,  C23C14/34 ,  C23F4/00

CPC classification number: H01J37/32715 ,  H01J37/32477 ,  H01J37/34

Abstract: A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

Abstract translation: 本公开的等离子体处理方法包括将Si含有材料或含氮材料附着到设置在处理容器中的静电卡盘，并且在工件为工件的状态下附着有含有C和F的反应产物 未安装在静电吸盘上; 当工件被运送到处理容器中时，通过附着有含Si材料或含氮材料的静电卡盘吸附工件; 用等离子体加工工件; 以及将由等离子体处理的工件与附着有含Si材料或含氮材料的静电卡盘分离。

公开(公告)号：US20140373867A1

公开(公告)日：2014-12-25

申请号：US14306548

申请日：2014-06-17

Applicant: Tokyo Electron Limited

Inventor： Akitoshi HARADA

IPC: C23C16/44 ,  C23C16/02 ,  H01J37/32

CPC classification number: H01J37/32862 ,  B08B9/00 ,  H01J37/32091

Abstract: A cleaning method, which is performed when using a substrate processing apparatus including at least an electrostatic chuck to receive a substrate and performing a plasma process on the substrate, for removing a deposit containing titanium and attached to the electrostatic chuck, is provided. In the method, the deposit containing titanium is reduced by plasma generated from a first process gas containing a reducing gas. Next, the reduced deposit containing titanium is removed by plasma generated from a second process gas containing a fluorine-based gas. A fluorocarbon based deposit deposited when removing the reduced deposit containing titanium by the plasma generated from the second process gas containing the fluorine-based gas is removed by plasma generated from a third process gas containing oxygen.

Abstract translation: 提供了一种清洁方法，其是在使用至少包括静电卡盘的基板处理装置来接收基板并在基板上执行等离子体处理时进行的，用于去除包含钛并附着到静电卡盘的沉积物。 在该方法中，含有钛的沉积物由含有还原气体的第一工艺气体产生的等离子体减少。 接下来，通过由含有氟系气体的第二工艺气体产生的等离子体除去含钛还原析出物。 通过由含有氟的第三工艺气体产生的等离子体除去由含有氟系气体的第二工艺气体产生的等离子体除去含有钛的还原沉积物时沉积的氟碳基沉积物。

公开(公告)号：US20170347442A1

公开(公告)日：2017-11-30

申请号：US15603648

申请日：2017-05-24

Applicant: Tokyo Electron Limited

Inventor： Yoshinori SUZUKI ,  Akitoshi HARADA

IPC: H05H1/46

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32715

Abstract: A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.

公开(公告)号：US20150004794A1

公开(公告)日：2015-01-01

申请号：US14308970

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Akitoshi HARADA

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32724 ,  H01L21/67248 ,  H01L21/6831

Abstract: A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of the electrostatic chuck is controlled in a step-by-step manner so as to change from the first temperature to a second temperature that is lower than the first temperature after performing the plasma process. An inside of the processing chamber is purged with an inactive gas after performing the plasma process.

Abstract translation: 提供了一种控制温度的方法。 在该方法中，在配置为具有温度可调节的静电卡盘上的被处理物体上的处理室中进行等离子体处理。 静电吸盘被控制为具有第一温度。 在进行等离子体处理之后，以一步一步的方式控制静电卡盘的温度，以便从第一温度变为低于第一温度的第二温度。 在执行等离子体处理之后，用惰性气体吹扫处理室的内部。

公开(公告)号：US20160196957A1

公开(公告)日：2016-07-07

申请号：US14962407

申请日：2015-12-08

Applicant: Tokyo Electron Limited

Inventor： Takamitsu TAKAYAMA ,  Akitoshi HARADA ,  Hideaki YAKUSHIJI

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

Abstract translation: 提供一种等离子体处理方法，其包括将基板装载到要执行等离子体处理的室中的步骤，将具有比用于等离子体激发的高频激发功率更低的频率的高频偏置功率施加到等离子体激发的步骤 安装基板的安装台，以及将静电卡盘配置为静电吸引安装在安装台上的基板的直流电压施加的步骤。 在施加高频偏置功率的步骤之后执行施加DC电压的步骤。

公开(公告)号：US20150170891A1

公开(公告)日：2015-06-18

申请号：US14567133

申请日：2014-12-11

Applicant: Tokyo Electron Limited

Inventor： Masanori TAKAHASHI ,  Tsuyoshi HIDA ,  Noboru TAKEMOTO ,  Hideaki YAKUSHIJI ,  Lin ChiaHung ,  Akitoshi HARADA

IPC: H01J37/34

CPC classification number: H01J37/32834 ,  H01J37/32844 ,  H01J37/32871 ,  Y02C20/30 ,  Y02P70/605

Abstract: A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.

Abstract translation: 设置在连接处理室和排气装置的抽气管内部的颗粒回流防止部分包括第一板部分和第二板部分，该第一板部分和第二板部分具有开口并且与第一板部分间隔开第一间隙 并且比第一板部更靠近排气装置。 开口在平面图中被第一板部分覆盖。