公开(公告)号：US20240212987A1

公开(公告)日：2024-06-27

申请号：US18433862

申请日：2024-02-06

申请人： Tokyo Electron Limited

发明人： Atsushi SAWACHI ,  Kota ISHIHARADA ,  Hideaki YAKUSHIJI ,  Yoshiyasu SATO ,  Shinya MORIKITA ,  Shota YOSHIMURA ,  Toshihiro TSURUTA ,  Kazuaki TAKAAI

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  H01J2237/334

摘要： A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.

公开(公告)号：US20160189988A1

公开(公告)日：2016-06-30

申请号：US14977778

申请日：2015-12-22

申请人： Tokyo Electron Limited

发明人： Hirofumi HAGA ,  Nobutaka NAKAO ,  Hideaki YAKUSHIJI

IPC分类号： H01L21/67

CPC分类号： H01L21/67069 ,  A61L2/14 ,  A61L2/24 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/0379 ,  Y10T137/86002 ,  Y10T137/86027 ,  Y10T137/86083

摘要： An evacuation method used for a vacuum processing apparatus including a vacuum processing chamber is provided. The vacuum processing chamber is evacuated by an exhaust device for a first predetermined period of time by opening a valve connecting the exhaust device with the vacuum processing chamber. A pressure in the vacuum processing chamber is urged to increase by closing the valve and leaving the valve closed for a second predetermined period of time after evacuating the vacuum processing chamber. Evacuating the vacuum processing chamber and urging the pressure in the vacuum processing chamber to increase are performed so as to reduce the pressure in the vacuum processing chamber to a pressure between 6.7 Pa and 13.3×102 Pa (between 5 Torr and 10 Torr) without freezing moisture in the vacuum processing chamber.

摘要翻译： 提供了一种用于包括真空处理室的真空处理设备的抽空方法。 通过打开连接排气装置与真空处理室的阀，通过排气装置将真空处理室抽空第一预定时间段。 在真空处理室抽真空之后，迫使真空处理室中的压力通过关闭阀门并使阀门关闭第二预定时间段而增加。 进行真空处理室的抽出和促使真空处理室内的压力升高，以将真空处理室内的压力降低至6.7Pa〜13.3×102Pa（5Torr〜10Torr）之间的压力而不会冻结 真空处理室内的水分。

公开(公告)号：US20160196957A1

公开(公告)日：2016-07-07

申请号：US14962407

申请日：2015-12-08

申请人： Tokyo Electron Limited

发明人： Takamitsu TAKAYAMA ,  Akitoshi HARADA ,  Hideaki YAKUSHIJI

IPC分类号： H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

摘要： A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

摘要翻译： 提供一种等离子体处理方法，其包括将基板装载到要执行等离子体处理的室中的步骤，将具有比用于等离子体激发的高频激发功率更低的频率的高频偏置功率施加到等离子体激发的步骤 安装基板的安装台，以及将静电卡盘配置为静电吸引安装在安装台上的基板的直流电压施加的步骤。 在施加高频偏置功率的步骤之后执行施加DC电压的步骤。

公开(公告)号：US20150170891A1

公开(公告)日：2015-06-18

申请号：US14567133

申请日：2014-12-11

申请人： Tokyo Electron Limited

发明人： Masanori TAKAHASHI ,  Tsuyoshi HIDA ,  Noboru TAKEMOTO ,  Hideaki YAKUSHIJI ,  Lin ChiaHung ,  Akitoshi HARADA

IPC分类号： H01J37/34

CPC分类号： H01J37/32834 ,  H01J37/32844 ,  H01J37/32871 ,  Y02C20/30 ,  Y02P70/605

摘要： A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.

摘要翻译： 设置在连接处理室和排气装置的抽气管内部的颗粒回流防止部分包括第一板部分和第二板部分，该第一板部分和第二板部分具有开口并且与第一板部分间隔开第一间隙 并且比第一板部更靠近排气装置。 开口在平面图中被第一板部分覆盖。