公开(公告)号：US20230343561A1

公开(公告)日：2023-10-26

申请号：US17766379

申请日：2020-09-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi ITOH ,  Masashi IMANAKA ,  Eiki KAMATA ,  Taro IKEDA ,  Shigenori OZAKI ,  Soudai EMORI

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/32238 ,  H01J2237/327

Abstract: There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

公开(公告)号：US20230085325A1

公开(公告)日：2023-03-16

申请号：US17903444

申请日：2022-09-06

Applicant: Tokyo Electron Limited

Inventor： Hirokazu KYOKANE ,  Hidefumi MATSUI ,  Toshiyuki FUKUMOTO ,  Satoshi ITOH ,  Masashi IMANAKA ,  Toyohisa TSURUDA ,  Masashi ENOMOTO ,  Masahiro YANAGISAWA

IPC: G01B11/06 ,  G06T7/60

Abstract: A substrate processing apparatus includes: an imaging portion configured to acquire a surface image of a film formed on a surface of a substrate; an optical property estimation portion configured to estimate an optical property of the film based on process information acquired during formation of the film; and a film thickness estimation portion configured to estimate a film thickness of the film based on the surface image and an estimation result of the optical property.