公开(公告)号：US20140235065A1

公开(公告)日：2014-08-21

申请号：US14182678

申请日：2014-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO

IPC: H01L21/02

CPC classification number: H01L21/0273 ,  H01L21/6715

Abstract: Disclosed is a semiconductor device manufacturing method that manufactures a semiconductor device having a resist pattern which is excellent in roughness property and line width property. The method includes forming a film which is elastic and incompatible with a resist patterned on an object to be processed to cover the surface of the resist, and heating the object to be processed formed with the film.

Abstract translation: 公开了一种半导体器件制造方法，其制造具有优异的粗糙度和线宽特性的抗蚀剂图案的半导体器件。 该方法包括形成与被处理物体上图案化的抗蚀剂弹性地不相容的膜，以覆盖抗蚀剂的表面，并加热形成有被膜的被处理物体。

公开(公告)号：US20210325780A1

公开(公告)日：2021-10-21

申请号：US17273183

申请日：2019-08-22

Applicant: Tokyo Electron Limited

Inventor： Kazuki YAMADA ,  Kyohei KOIKE ,  Masatoshi YAMATO ,  Hidetami YAEGASHI

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/16

Abstract: A method of producing a resist film includes: a laminating step of fabricating a workpiece by laminating the resist film on an etching target film; and an infiltration step of exposing the workpiece to a gas of a precursor containing a metal having a higher EUV light absorption rate than carbon to infiltrate the metal into the resist film.

公开(公告)号：US20160358769A1

公开(公告)日：2016-12-08

申请号：US15237840

申请日：2016-08-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO ,  Tomohiro ISEKI ,  Toyohisa TSURUDA

IPC: H01L21/027 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/36 ,  H01L21/0276

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract translation: 提供了一种半导体器件制造方法，包括：成膜工艺，其中通过向具有抗蚀图案的目标物体提供用于将抗蚀剂的表面层修饰的溶液并且使溶液渗入抗蚀剂中的膜， 在抗蚀剂的表面层中形成具有弹性且与抗蚀剂不相容的物质; 以及加热其中形成有膜的目标物体的加热过程。

公开(公告)号：US20180374695A1

公开(公告)日：2018-12-27

申请号：US16008392

申请日：2018-06-14

Applicant: Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Kazuki YAMADA ,  Masatoshi YAMATO ,  Hidetami YAEGASHI ,  Yoshitaka KOMURO ,  Takehiro SESHIMO ,  Katsumi OHMORI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/308

CPC classification number: H01L21/0273 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0279 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31058 ,  H01L21/31144

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

公开(公告)号：US20180076030A1

公开(公告)日：2018-03-15

申请号：US15697355

申请日：2017-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki YAMADA ,  Masatoshi YAMATO ,  Ryota IFUKU ,  Shuji AZUMO ,  Takashi FUSE

IPC: H01L21/02 ,  C23C16/32

Abstract: There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon film.

公开(公告)号：US20160049292A1

公开(公告)日：2016-02-18

申请号：US14818409

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO ,  Tomohiro ISEKI ,  Toyohisa TSURUDA

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0273 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/36 ,  H01L21/0276

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract translation: 提供了一种半导体器件制造方法，包括：成膜工艺，其中通过向具有抗蚀图案的目标物体提供用于将抗蚀剂的表面层修饰的溶液并且使溶液渗入抗蚀剂中的膜， 在抗蚀剂的表面层中形成具有弹性且与抗蚀剂不相容的物质; 以及加热其中形成有膜的目标物体的加热过程。