公开(公告)号：US20210318618A1

公开(公告)日：2021-10-14

申请号：US17268362

申请日：2019-08-21

Applicant: Tokyo Electron Limited

Inventor： Satoru SHIMURA ,  Soichiro OKADA ,  Masashi ENOMOTO ,  Hidetami YAEGASHI

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, performing a treatment of decreasing a polarity of the base film when the polarity of the base film is higher than a polarity of the resist solution, and performing a treatment of increasing the polarity of the base film when the polarity of the base film is lower than the polarity of the resist solution.

公开(公告)号：US20200066536A1

公开(公告)日：2020-02-27

申请号：US16542396

申请日：2019-08-16

Applicant: Tokyo Electron Limited

Inventor： Hidetami YAEGASHI

IPC: H01L21/308 ,  G03F7/09 ,  G03F7/004 ,  G03F7/26 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming a mask includes forming a base film containing a treatment agent on an object, forming a photosensitive organic film on the base film, forming an infiltrated portion by infiltrating the treatment agent into a lower portion of the photosensitive organic film, selectively exposing the photosensitive organic film to form a first region soluble in an alkaline solution and a second region insoluble in the alkaline solution, forming a third region insoluble in the alkaline solution in the infiltrated portion in the first region by causing a reaction between the first region and the treatment agent, developing the photosensitive organic film to remove a fourth region that is in the first region and other than the third region while leaving intact the second region and the third region, and etching the photosensitive organic film to remove one of the second region and the third region.

公开(公告)号：US20170352584A1

公开(公告)日：2017-12-07

申请号：US15602307

申请日：2017-05-23

Applicant: Tokyo Electron Limited

Inventor： Hidetami YAEGASHI

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0237 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76832 ,  H01L21/76879

Abstract: A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface and a side surface of the second film. The third film has an etching selectivity different from those of the first and second films. A resist pattern with an opening is formed on the third film. A recess that exposes upper surfaces of the first, second and third films is formed by etching the third film by using the resist pattern as an etching mask. An upper surface of the under film is exposed by etching the first and third films. A through hole that penetrates through the under film is formed by etching the under film.

公开(公告)号：US20150241787A1

公开(公告)日：2015-08-27

申请号：US14619700

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI

IPC: G03F7/36 ,  G03B27/52 ,  G03D13/00

CPC classification number: G03D13/00 ,  G03F7/039 ,  G03F7/3021 ,  G03F7/405 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178

Abstract: Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.

Abstract translation: 提供了一种基板处理方法，其中在晶片上执行光刻处理以在晶片上形成抗蚀剂图案。 将紫外线照射到抗蚀剂图案上以切割抗蚀剂图案的侧链，以改善抗蚀剂图案的线边缘粗糙度。 使处理剂进入抗蚀剂图案，并且通过处理剂使金属渗透到抗蚀剂图案中。 此后，加热晶片以从抗蚀剂图案蒸发处理剂以形成固化的抗蚀剂图案。

公开(公告)号：US20150235850A1

公开(公告)日：2015-08-20

申请号：US14619616

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI

IPC: H01L21/033 ,  C23C16/52 ,  C23C16/46 ,  H01L21/677 ,  C23C16/458

CPC classification number: H01L21/0337 ,  H01L21/67178

Abstract: A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.

Abstract translation: 本发明的半导体器件制造方法包括在基板上形成具有防水表面的基膜; 在基膜上形成具有防水表面的感光膜; 显影感光膜以露出基膜，从而形成感光膜图案; 在感光膜上和暴露的基底膜上提供第一间隔物质; 以及去除形成在所述感光膜的顶表面上的所述第一隔离物材料的至少一部分和所述基膜的顶表面。

公开(公告)号：US20140235065A1

公开(公告)日：2014-08-21

申请号：US14182678

申请日：2014-02-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO

IPC: H01L21/02

CPC classification number: H01L21/0273 ,  H01L21/6715

Abstract: Disclosed is a semiconductor device manufacturing method that manufactures a semiconductor device having a resist pattern which is excellent in roughness property and line width property. The method includes forming a film which is elastic and incompatible with a resist patterned on an object to be processed to cover the surface of the resist, and heating the object to be processed formed with the film.

Abstract translation: 公开了一种半导体器件制造方法，其制造具有优异的粗糙度和线宽特性的抗蚀剂图案的半导体器件。 该方法包括形成与被处理物体上图案化的抗蚀剂弹性地不相容的膜，以覆盖抗蚀剂的表面，并加热形成有被膜的被处理物体。

公开(公告)号：US20140094034A1

公开(公告)日：2014-04-03

申请号：US14038345

申请日：2013-09-26

Applicant: Tokyo Electron Limited

Inventor： Kenichi OYAMA ,  Hidetami YAEGASHI

IPC: H01L21/306

CPC classification number: H01L21/306 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract translation: 图案形成方法包括在基板上形成图案形成材料膜作为蚀刻靶膜，所述图案形成材料膜具有曝光时具有孔隙率的曝光部分和非曝光部分，图案化和曝光图案形成材料膜，用于 暴露部分具有孔隙率，选择性地将填充材料渗透到曝光部分的空隙中以加强曝光部分，以及通过干蚀刻去除图案形成材料膜的非曝光部分以形成预定图案。

公开(公告)号：US20210325780A1

公开(公告)日：2021-10-21

申请号：US17273183

申请日：2019-08-22

Applicant: Tokyo Electron Limited

Inventor： Kazuki YAMADA ,  Kyohei KOIKE ,  Masatoshi YAMATO ,  Hidetami YAEGASHI

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/16

Abstract: A method of producing a resist film includes: a laminating step of fabricating a workpiece by laminating the resist film on an etching target film; and an infiltration step of exposing the workpiece to a gas of a precursor containing a metal having a higher EUV light absorption rate than carbon to infiltrate the metal into the resist film.

公开(公告)号：US20180143536A1

公开(公告)日：2018-05-24

申请号：US15817724

申请日：2017-11-20

Applicant: Tokyo Electron Limited ,  Tokyo Ohka Kogyo Co., Ltd.

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Katsumi OHMORI ,  Yoshitaka KOMURO ,  Takehiro SESHIMO

IPC: G03F7/20 ,  G06F17/50 ,  H01L21/3213 ,  H01L21/033 ,  G03F1/76 ,  G03F1/36

CPC classification number: G03F7/202 ,  G03F1/36 ,  G03F1/76 ,  G06F17/5081 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/768 ,  H01L23/544 ,  H01L2223/54426

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

公开(公告)号：US20160358769A1

公开(公告)日：2016-12-08

申请号：US15237840

申请日：2016-08-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami YAEGASHI ,  Kenichi OYAMA ,  Masatoshi YAMATO ,  Tomohiro ISEKI ,  Toyohisa TSURUDA

IPC: H01L21/027 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20

CPC classification number: H01L21/0273 ,  G03F7/0045 ,  G03F7/20 ,  G03F7/36 ,  H01L21/0276

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

Abstract translation: 提供了一种半导体器件制造方法，包括：成膜工艺，其中通过向具有抗蚀图案的目标物体提供用于将抗蚀剂的表面层修饰的溶液并且使溶液渗入抗蚀剂中的膜， 在抗蚀剂的表面层中形成具有弹性且与抗蚀剂不相容的物质; 以及加热其中形成有膜的目标物体的加热过程。