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公开(公告)号：US12125676B2
公开(公告)日：2024-10-22
申请号：US18224749
申请日：2023-07-21
发明人： Takahiro Takeuchi , Ken Kobayashi
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32183
摘要： A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator generating a first RF pulsed signal including a plurality of first pulse cycles in which each cycle includes first, second, and third periods, and the first RF pulsed signal has first, second, and third power levels in first, second, and third periods, respectively; a second RF generator generating a second RF pulsed signal including a plurality of second pulse cycles in which each cycle includes fourth and fifth periods, and the second RF pulsed signal has fourth and fifth power levels in fourth and fifth periods, respectively; and a third RF generator generating a third RF pulsed signal including a plurality of third pulse cycles in which each cycle includes sixth and seventh periods, and the third RF pulsed signal has sixth and seventh power levels in sixth and seventh periods, respectively.
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公开(公告)号：US20240234158A1
公开(公告)日：2024-07-11
申请号：US18151223
申请日：2023-01-06
发明人： Indroneil Roy , Jason Marion , Yusuke Yoshida , Yun Han , Aelan Mosden , Ken Kobayashi
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311
CPC分类号： H01L21/30655 , H01J37/32816 , H01L21/02274 , H01L21/31116 , H01L21/31144 , H01J2237/3345 , H01J2237/3347
摘要： A method for fabricating a semiconductor device includes forming a pattern of trenches by etching a first layer formed over an underlying layer of a substrate, each of the trenches having an aspect ratio (AR) in a range with a lower limit of a first AR and an upper limit of a second AR, the pattern including a low-AR trench having the first AR and a high-AR trench having the second AR, the AR of a trench being a ratio of its depth to its opening width, the etching including: executing a first recipe in a plasma chamber to anisotropically etch the first layer for a first duration by flowing etchants through the chamber, an etch rate of the first layer being higher on the low-AR trench relative to that on the high-AR trench; and after executing the first recipe, executing a second recipe in the plasma chamber to etch the first layer anisotropically and concurrently deposit oxygen-containing etch byproducts to passivate exposed portions of sides of the trenches, the etch rate of the first layer being lower on the low-AR trench relative to that on the high-AR trench, wherein executing the second recipe increases a relative oxygen content in the plasma chamber from a first value during the executing of the first recipe to a second value.
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公开(公告)号：US20230317462A1
公开(公告)日：2023-10-05
申请号：US17690715
申请日：2022-03-09
发明人： Yun Han , Alok Ranjan , Tomoyuki Oishi , Shuhei Ogawa , Ken Kobayashi , Peter Biolsi
IPC分类号： H01L21/3065 , H01L21/8234
CPC分类号： H01L21/3065 , H01L21/823431
摘要： A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.
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公开(公告)号：US09349574B2
公开(公告)日：2016-05-24
申请号：US14414946
申请日：2013-08-05
发明人： Ryoichi Yoshida , Takayuki Ishii , Ken Kobayashi
IPC分类号： C03C15/00 , H01J37/32 , H01L21/027 , H01L21/311
CPC分类号： H01J37/32082 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J37/32688 , H01J2237/334 , H01L21/0273 , H01L21/31116 , H01L21/31144
摘要： A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.
摘要翻译： 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。
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公开(公告)号：US11756767B2
公开(公告)日：2023-09-12
申请号：US17475909
申请日：2021-09-15
发明人： Takahiro Takeuchi , Ken Kobayashi
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , H01J37/32183
摘要： A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator generating a first RF pulsed signal including a plurality of first pulse cycles in which each cycle includes first, second, and third periods, and the first RF pulsed signal has first, second, and third power levels in first, second, and third periods, respectively; a second RF generator generating a second RF pulsed signal including a plurality of second pulse cycles in which each cycle includes fourth and fifth periods, and the second RF pulsed signal has fourth and fifth power levels in fourth and fifth periods, respectively; and a third RF generator generating a third RF pulsed signal including a plurality of third pulse cycles in which each cycle includes sixth and seventh periods, and the third RF pulsed signal has sixth and seventh power levels in sixth and seventh periods, respectively.
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公开(公告)号：US20220084789A1
公开(公告)日：2022-03-17
申请号：US17475909
申请日：2021-09-15
发明人： Takahiro Takeuchi , Ken Kobayashi
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator generating a first RF pulsed signal including a plurality of first pulse cycles in which each cycle includes first, second, and third periods, and the first RF pulsed signal has first, second, and third power levels in first, second, and third periods, respectively; a second RF generator generating a second RF pulsed signal including a plurality of second pulse cycles in which each cycle includes fourth and fifth periods, and the second RF pulsed signal has fourth and fifth power levels in fourth and fifth periods, respectively; and a third RF generator generating a third RF pulsed signal including a plurality of third pulse cycles in which each cycle includes sixth and seventh periods, and the third RF pulsed signal has sixth and seventh power levels in sixth and seventh periods, respectively.
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公开(公告)号：US20150243524A1
公开(公告)日：2015-08-27
申请号：US14427780
申请日：2013-09-11
发明人： Yoshihide Kihara , Hiromi Mochizuki , Masanobu Honda , Masaya Kawamata , Ken Kobayashi , Ryoichi Yoshida
IPC分类号： H01L21/311 , H01L21/687 , H01J37/32 , H01L21/67
CPC分类号： H01L21/31144 , G03F7/40 , H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32733 , H01L21/0273 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/6831 , H01L21/68764
摘要： A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).
摘要翻译： 一种处理目标物体的方法包括：（a）将目标物体安装在设置在处理容器中的安装台上时，将抗蚀剂掩模暴露于在处理容器内激发含氢气体的等离子体产生的活性氢原子; 和（b）在将抗蚀剂掩模暴露于活性物质的氢之后，通过激发处理容器内的蚀刻剂气体的等离子体蚀刻硬掩模层。 通过向上电极施加用于等离子体激发的高频功率来激发等离子体。 在该方法中，将硬质掩模层（b）工序）的蚀刻中的上部电极与安装台之间的距离设定为比抗蚀剂露出时的上部电极与安装台的距离大 对活性氢的物质的掩模（（a）工艺）。
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公开(公告)号：US11972925B2
公开(公告)日：2024-04-30
申请号：US17314517
申请日：2021-05-07
发明人： Bong seong Kim , Ken Kobayashi , Mitsunori Ohata , Yoon Ho Bae
IPC分类号： H01L21/00 , H01J37/32 , H01L21/311 , H01L21/67 , H01L21/683
CPC分类号： H01J37/32146 , H01J37/321 , H01J37/32155 , H01J37/32568 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01L21/6831 , H01J2237/3343
摘要： A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.
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公开(公告)号：US09583361B2
公开(公告)日：2017-02-28
申请号：US14427780
申请日：2013-09-11
发明人： Yoshihide Kihara , Hiromi Mochizuki , Masanobu Honda , Masaya Kawamata , Ken Kobayashi , Ryoichi Yoshida
IPC分类号： H01L21/311 , H01L21/027 , H01L21/3213 , H01J37/32 , H01L21/3065 , H01L21/687 , G03F7/40 , H01L21/683 , H01L21/67
CPC分类号： H01L21/31144 , G03F7/40 , H01J37/32082 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32733 , H01L21/0273 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/6831 , H01L21/68764
摘要： A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).
摘要翻译： 一种处理目标物体的方法包括：（a）将目标物体安装在设置在处理容器中的安装台上时，将抗蚀剂掩模暴露于在处理容器内激发含氢气体的等离子体产生的活性氢原子; 和（b）在将抗蚀剂掩模暴露于活性物质的氢之后，通过激发处理容器内的蚀刻剂气体的等离子体蚀刻硬掩模层。 通过向上电极施加用于等离子体激发的高频功率来激发等离子体。 在该方法中，将硬质掩模层（b）工序）的蚀刻中的上部电极与安装台之间的距离设定为比抗蚀剂露出时的上部电极与安装台的距离大 对活性氢的物质的掩模（（a）工艺）。
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公开(公告)号：US20150206715A1
公开(公告)日：2015-07-23
申请号：US14414946
申请日：2013-08-05
发明人： Ryoichi Yoshida , Takayuki Ishii , Ken Kobayashi
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32449 , H01J37/3266 , H01J37/32669 , H01J37/32688 , H01J2237/334 , H01L21/0273 , H01L21/31116 , H01L21/31144
摘要： A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.
摘要翻译： 等离子体蚀刻方法包括等离子体处理等离子体处理光刻胶的表面，该表面具有与含氢气体产生的等离子体具有预定图案。 此外，等离子体蚀刻方法包括通过使用等离子体处理的光致抗蚀剂作为掩模，从基于CF的气体产生的等离子体和含有基于CHF的气体的气体蚀刻含硅膜的蚀刻工艺。 此外，在等离子体蚀刻方法中，等离子体处理和蚀刻处理重复至少两次以上。
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