公开(公告)号：US20230317462A1

公开(公告)日：2023-10-05

申请号：US17690715

申请日：2022-03-09

申请人： Tokyo Electron Limited

发明人： Yun Han ,  Alok Ranjan ,  Tomoyuki Oishi ,  Shuhei Ogawa ,  Ken Kobayashi ,  Peter Biolsi

IPC分类号： H01L21/3065 ,  H01L21/8234

CPC分类号： H01L21/3065 ,  H01L21/823431

摘要： A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.

公开(公告)号：US09721766B2

公开(公告)日：2017-08-01

申请号：US15284635

申请日：2016-10-04

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Masanobu Honda ,  Tomoyuki Oishi

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/027

CPC分类号： H01J37/32871 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

摘要： A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

公开(公告)号：US11244828B2

公开(公告)日：2022-02-08

申请号：US16898492

申请日：2020-06-11

申请人： Tokyo Electron Limited

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Tomoyuki Oishi

IPC分类号： H01L21/311 ,  H01L21/027 ,  G03F1/80 ,  G03F1/48 ,  H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  H01L21/3213

摘要： According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

公开(公告)号：US09859126B2

公开(公告)日：2018-01-02

申请号：US15137095

申请日：2016-04-25

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide Kihara ,  Tomoyuki Oishi ,  Toru Hisamatsu

IPC分类号： H01L21/3065 ,  B44C1/22 ,  H01L21/67 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/3065 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/45542 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.

公开(公告)号：US09911622B2

公开(公告)日：2018-03-06

申请号：US15007420

申请日：2016-01-27

申请人： Tokyo Electron Limited

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Tomoyuki Oishi ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/027

CPC分类号： H01L21/31144 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138

摘要： Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.

公开(公告)号：US20160225639A1

公开(公告)日：2016-08-04

申请号：US15007420

申请日：2016-01-27

申请人： Tokyo Electron Limited

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Tomoyuki Oishi ,  Masanobu Honda

IPC分类号： H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC分类号： H01L21/31144 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138

摘要： Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.

摘要翻译： 即使当掩模的开口的纵横比增加时，也可以减少形成在加工对象物上的氧化硅膜的厚度的不均匀性。 通过重复以下顺序形成氧化硅膜：（a）通过在等离子体处理装置的处理容器内产生含有卤化硅气体的第一气体的等离子体，在加工对象物上形成反应物前体的第一工序; （b）在第一工序之后在处理容器内产生稀有气体的等离子体的第二工序; （c）在第二工序之后，在处理容器内产生含有氧气的第二气体的等离子体，形成氧化硅膜的第三工序; 以及（d）在第三工序之后，在处理容器内产生稀有气体的等离子体的第四工序。

公开(公告)号：US11823903B2

公开(公告)日：2023-11-21

申请号：US17560245

申请日：2021-12-22

申请人： Tokyo Electron Limited

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Tomoyuki Oishi

IPC分类号： H01L21/027 ,  G03F1/48 ,  G03F1/80 ,  H01J37/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/0276 ,  G03F1/48 ,  G03F1/80 ,  H01J37/32 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0275 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01J2237/334

摘要： According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

公开(公告)号：US10714340B2

公开(公告)日：2020-07-14

申请号：US16089024

申请日：2017-03-27

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Tomoyuki Oishi

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  G03F1/80 ,  G03F1/48 ,  H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  H01L21/3213

摘要： According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK1, and a method MT according to an embodiment includes a step of performing an etching process on the antireflection film AL by using the mask MK1 with plasma generated in a processing container 12, in the processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film SX on the surface of the mask MK1, and steps ST6a to ST7 of etching the antireflection film AL by removing the antireflection film AL for each atomic layer by using the mask MK1 on which the protective film SX is formed.