公开(公告)号：US11626290B2

公开(公告)日：2023-04-11

申请号：US17397561

申请日：2021-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Osamu Yokoyama ,  Kwangpyo Choi ,  Kazuki Hashimoto ,  Rio Shimizu ,  Takashi Kobayashi ,  Takashi Sakuma ,  Shinya Okabe

IPC: H01L21/311 ,  H01L21/67

Abstract: A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.

公开(公告)号：US20180261464A1

公开(公告)日：2018-09-13

申请号：US15914071

申请日：2018-03-07

Applicant: Tokyo Electron Limited

Inventor： Takashi Kobayashi ,  Takashi Sakuma ,  Hideaki Yamasaki ,  Rio Shimizu ,  Einosuke Tsuda

IPC: H01L21/311 ,  H01L21/02 ,  H01L29/66 ,  H01L21/67 ,  H01L21/285 ,  H01L21/677 ,  H01L29/45

Abstract: Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching.