公开(公告)号：US20180261464A1

公开(公告)日：2018-09-13

申请号：US15914071

申请日：2018-03-07

申请人： Tokyo Electron Limited

发明人： Takashi Kobayashi ,  Takashi Sakuma ,  Hideaki Yamasaki ,  Rio Shimizu ,  Einosuke Tsuda

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L29/66 ,  H01L21/67 ,  H01L21/285 ,  H01L21/677 ,  H01L29/45

摘要： Disclosed is a method for removing, from a processing target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion of a bottom of the pattern. The method includes: removing the silicon-containing oxide film formed on the bottom of the pattern by ionic anisotropic plasma etching using plasma of a carbon-based gas; removing a remaining portion of the silicon-containing oxide film after the anisotropic plasma etching, by chemical etching; and removing a residue remaining after the chemical etching.

公开(公告)号：US11626290B2

公开(公告)日：2023-04-11

申请号：US17397561

申请日：2021-08-09

申请人： TOKYO ELECTRON LIMITED

发明人： Osamu Yokoyama ,  Kwangpyo Choi ,  Kazuki Hashimoto ,  Rio Shimizu ,  Takashi Kobayashi ,  Takashi Sakuma ,  Shinya Okabe

IPC分类号： H01L21/311 ,  H01L21/67

摘要： A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.

公开(公告)号：US10242878B2

公开(公告)日：2019-03-26

申请号：US15443687

申请日：2017-02-27

申请人： TOKYO ELECTRON LIMITED

发明人： Tomonari Urano ,  Kyohei Noguchi ,  Osamu Yokoyama ,  Takashi Kobayashi ,  Satoshi Wakabayashi ,  Takashi Sakuma

IPC分类号： H01L21/44 ,  H01L21/285 ,  H01L21/67 ,  H01L21/673

摘要： A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.

公开(公告)号：US20170338120A1

公开(公告)日：2017-11-23

申请号：US15596060

申请日：2017-05-16

申请人： Tokyo Electron Limited

发明人： Takashi Kobayashi ,  Seishi Murakami ,  Takashi Sakuma ,  Masahiko Tomita ,  Takamichi Kikuchi ,  Akitaka Shimizu ,  Takayuki Kamaishi ,  Einosuke Tsuda

IPC分类号： H01L21/308 ,  H01L21/285 ,  H01L21/67

CPC分类号： H01L21/3081 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67207

摘要： Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

公开(公告)号：US09984892B2

公开(公告)日：2018-05-29

申请号：US15596060

申请日：2017-05-16

申请人： Tokyo Electron Limited

发明人： Takashi Kobayashi ,  Seishi Murakami ,  Takashi Sakuma ,  Masahiko Tomita ,  Takamichi Kikuchi ,  Akitaka Shimizu ,  Takayuki Kamaishi ,  Einosuke Tsuda

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01L21/285 ,  H01L21/67

CPC分类号： H01L21/3081 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67207

摘要： Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.