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公开(公告)号：US20210384017A1
公开(公告)日：2021-12-09
申请号：US17336890
申请日：2021-06-02
Applicant: Tokyo Electron Limited
Inventor： Takaaki NEZU , Yuta YAMATO , Akiyoshi KAWASHIMA , Hiroki INADUMA , Kazuyuki MIURA
IPC: H01J37/32
Abstract: The present invention efficiently captures a target object contained in an exhaust gas. A trap apparatus includes a tubular housing including a flow path through which an exhaust gas exhausted through an exhaust pipe flows, a plate-shaped first trap member arranged inside the housing so as to shield a central portion of the flow path when viewed in a direction along a central axis of the housing, and a plate-shaped second trap member arranged inside the housing at an interval from the first trap member in the direction along the central axis of the housing, the second trap member including an opening at a position corresponding to the first trap member.
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公开(公告)号：US20210050190A1
公开(公告)日：2021-02-18
申请号：US16990294
申请日：2020-08-11
Applicant: Tokyo Electron Limited
Inventor： Kazuyuki MIURA , Norihiko AMIKURA
IPC: H01J37/32
Abstract: A substrate processing method is provided. In the method, a process gas is supplied into a chamber. A pressure in the chamber is controlled to a first pressure by evacuating the chamber via a first exhaust line. Then, the pressure in the chamber is controlled to a second pressure that is higher than the first pressure by evacuating the chamber via a second exhaust line while closing the first exhaust line. Next, the pressure in the chamber is controlled to the first pressure by evacuating the chamber via the first exhaust line while closing the second exhaust line.
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Patent Agency Ranking
公开(公告)号：US20170298958A1
公开(公告)日：2017-10-19
申请号：US15485778
申请日：2017-04-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tsutomu MOCHIZUKI , Kazuhiro CHIBA , Ryo MURAKAMI , Kazuyuki MIURA
Abstract: A heating device for heating a component in a turbo molecular pump for exhausting a gas includes a heat transfer member, a heater, a first seal member and a second seal member. The heat transfer member is provided in an opening of a housing of the turbo molecular pump and has one end fixed to the component and the other end exposed to an outside. The heater in the heat transfer member heats the component through the heat transfer member. The first seal member is provided between the heat transfer member and the opening along an outer peripheral surface of the heat transfer member. The second seal member between the heat transfer member and the opening is located close to the component compared to the first seal member. The second seal member suppresses movement of radicals in a gas into a space between the heat transfer member and the opening.
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4.发明申请公开(公告)号：US20200292403A1
公开(公告)日：2020-09-17
申请号：US16806628
申请日：2020-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Norihiko AMIKURA , Kazuyuki MIURA , Keita SHOUJI
Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.
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公开(公告)号：US20190301912A1
公开(公告)日：2019-10-03
申请号：US16361410
申请日：2019-03-22
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako MIYOSHI , Norihiko AMIKURA , Kazuyuki MIURA , Hiroshi YAZAKI , Yasuhiro SHOJI
Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
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公开(公告)号：US20200278225A1
公开(公告)日：2020-09-03
申请号：US16645898
申请日：2019-05-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Norihiko AMIKURA , Risako MATSUDA , Kazuyuki MIURA
IPC: G01F1/50
Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.
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公开(公告)号：US20190212176A1
公开(公告)日：2019-07-11
申请号：US16238834
申请日：2019-01-03
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako MIYOSHI , Norihiko AMIKURA , Kazuyuki MIURA , Masaaki NAGASE , Satoru YAMASHITA , Yohei SAWADA , Kouji NISHINO , Nobukazu IKEDA
CPC classification number: G01F1/50 , G01F25/0053
Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
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