公开(公告)号：US20230420228A1

公开(公告)日：2023-12-28

申请号：US18462258

申请日：2023-09-06

Applicant: Tokyo Electron Limited

Inventor： Akihiro YOKOTA ,  Ryo TERASHIMA ,  Tomo MURAKAMI ,  Takaharu SAINO

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32935

Abstract: A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.

公开(公告)号：US20220122847A1

公开(公告)日：2022-04-21

申请号：US17450886

申请日：2021-10-14

Applicant: Tokyo Electron Limited

Inventor： Yuzuru SAKAI ,  Ryo TERASHIMA

IPC: H01L21/311 ,  H01J37/32

Abstract: A plasma processing apparatus includes a plurality of plasma processing chambers, a process gas supply line that supplies a plasma processing gas to the plasma processing chambers, a first additive gas supply line that supplies an additive gas to the plasma processing chambers, an exhaust space shared by the plurality of plasma processing chambers, and a controller. The controller determines a first plasma processing chamber group and a second plasma processing chamber group. The first plasma processing chamber group includes one or more plasma processing chambers, each of which performs the plasma processing and the second plasma processing chamber group includes one or more plasma processing chambers, each of which does not perform the plasma processing. The controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.

公开(公告)号：US20210134596A1

公开(公告)日：2021-05-06

申请号：US17084792

申请日：2020-10-30

Applicant: Tokyo Electron Limited

Inventor： Ryo TERASHIMA ,  Yuzuru SAKAI

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32

Abstract: A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.