公开(公告)号：US20210280419A1

公开(公告)日：2021-09-09

申请号：US17190818

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Noriaki OKABE ,  Takuya SEINO ,  Ryota KOZUKA ,  Yasuhiro HAMADA ,  Yuutaro KISHI

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/308

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.